Journal
MATERIALS LETTERS
Volume 164, Issue -, Pages 613-617Publisher
ELSEVIER
DOI: 10.1016/j.matlet.2015.11.062
Keywords
Microstructure; Black silicon; AIC; RIE; XPS; Optical materials and properties
Funding
- National Natural Science Foundation of China [51205373, 61335008, 61401458]
- Jiangsu Natural Science Foundation [BK 20131098]
- Outstanding Young Talents Support Plan of Shanxi province
- Henan Province Collaborative Projects in Science and Technology [132106000073]
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A nanoforest of black silicon was prepared using a method combining aluminum-induced crystallization (AIC) and reactive-ion etching (RIE). During the AIC period, a rough layer, incorporating AISix intermetallics, was formed. This layer acted as an etch mask for the RIE step. X-ray photoelectron spectroscopic (XPS) measurements were performed to further analyze the formation of black silicon. Compared to Si3N4 and polysilicon, the black silicon exhibits a high degree of infrared absorption for wavelengths of about 3 to 5 mu m and 8 to 14 mu m, respectively. In addition, black platinum overlaid on the base of black silicon further improves the infrared absorption. This nanostructure forests of black silicon could be incorporated into the fabrication process for gas detectors, photovoltaic devices, and imaging applications to improve the infrared absorption characteristics. (C) 2015 Elsevier B.V. All rights reserved.
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