4.6 Article

High-temperature dielectric properties of Gd2O3-doped CeO2 ceramics

Journal

MATERIALS LETTERS
Volume 166, Issue -, Pages 192-195

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2015.12.078

Keywords

Ceramics; Dielectric properties; Bulk; Grain boundary; Contact

Funding

  1. National Natural Science Foundation of China [51572001, 51502001]
  2. Co-operative Innovation Research Center for Weak Signal Detecting Materials and Devices Integration of Anhui University [Y01008411]

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Ceramic samples of Gd2O3-doped CeO2 (GDC) were fabricated by the co-precipitation method. The dielectric properties were investigated as functions of temperature (350-950 K) and frequency (100 Hz to 10 MHz). Three relaxations with the activation energies of 0.76, 0.88, and 1.03 eV in the order of ascending temperature were observed in GDC. The low-, middle-, and high-temperature relaxations are argued to be related to the bulk response caused by the Gd dopant-oxygen vacancy pairs, grain boundary, and contact effects, respectively. (C) 2015 Elsevier B.V. All rights reserved.

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