Study on avalanche ruggedness of high voltage IGBTs

Complete Avalanche Process and Failure Mechanism of Trench-Gate FS-IGBT Under Unclamped Inductive Switching by Using Infrared Visualization Method

(2020) Xin Tong et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Temporally- and Spatially-Resolved Observations of Current Filament Dynamics in Insulated Gate Bipolar Transistor Chip During Avalanche Breakdown

(2019) Koichi Endo et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Peak electric field shifting induced by avalanche injection under static avalanche in high voltage diode

(2017) Cailin Wang et al.   IEICE Electronics Express

Physics of the Negative Resistance in the Avalanche $I{-}V$ Curve of Field Stop IGBTs: Collector Design Rules for Improved Ruggedness

(2014) Paolo Spirito et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Limiting Factors of the Safe Operating Area for Power Devices

(2012) Hans-Joachim Schulze et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Experimental Detection and Numerical Validation of Different Failure Mechanisms in IGBTs During Unclamped Inductive Switching

(2012) Giovanni Breglio et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analytical Modeling of IGBTs: Challenges and Solutions

(2012) B. J. Baliga   IEEE TRANSACTIONS ON ELECTRON DEVICES

The $\hbox{nn}^{+}$-Junction as the Key to Improved Ruggedness and Soft Recovery of Power Diodes

(2009) Josef Lutz et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES