Journal
NANOMATERIALS
Volume 12, Issue 19, Pages -Publisher
MDPI
DOI: 10.3390/nano12193334
Keywords
RRAM; TaOx; nitrogen doping; resistive switching; variability; potentiation; depression
Categories
Funding
- Korea Institute of Energy Technology Evaluation and Planning (KETEP)
- Ministry of Trade, Industry & Energy(MOTIE) of the Republic of Korea [20224000000020]
- National Research Foundation of Korea (NRF) - Ministry of Science [2021K1A3A1A49098073]
- National Research Foundation of Korea [2021K1A3A1A49098073] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
In this article, the authors investigated the resistive random-access memory (RRAM) for neuromorphic systems and found that the nitrogen-doped tantalum oxide (TaOx:N)-based device showed improved resistance variability, set distribution, pulse endurance, and synaptic properties compared to the undoped device. The proposed nitrogen-doped device is more suitable for neuromorphic systems due to its improved uniformity of conductance.
Resistive random-access memory (RRAM) for neuromorphic systems has received significant attention because of its advantages, such as low power consumption, high-density structure, and high-speed switching. However, variability occurs because of the stochastic nature of conductive filaments (CFs), producing inaccurate results in neuromorphic systems. In this article, we fabricated nitrogen-doped tantalum oxide (TaOx:N)-based resistive switching (RS) memory. The TaOx:N-based device significantly enhanced the RS characteristics compared with a TaOx-based device in terms of resistance variability. It achieved lower device-to-device variability in both low-resistance state (LRS) and high-resistance state (HRS), 8.7% and 48.3% rather than undoped device of 35% and 60.7%. Furthermore, the N-doped device showed a centralized set distribution with a 9.4% variability, while the undoped device exhibited a wider distribution with a 17.2% variability. Concerning pulse endurance, nitrogen doping prevented durability from being degraded. Finally, for synaptic properties, the potentiation and depression of the TaOx:N-based device exhibited a more stable cycle-to-cycle variability of 4.9%, compared with only 13.7% for the TaOx-based device. The proposed nitrogen-doped device is more suitable for neuromorphic systems because, unlike the undoped device, uniformity of conductance can be obtained.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available