Effect of Sacrificial Mg2Si Layers and Kinetic Parameters on the Growth, Structure, and Optical Properties of Thin Ca2Si Films on Silicon Substrates

Ca2Si(100) epitaxial films on the Si(111) substrate: Template growth, structural and optical properties

(2020) Nikolay G. Galkin et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Study of Mg2Si Thin Film and Ultra-Thin Film Formation for Thermoelectric Applications

(2019) Belkacem Zouak et al.   JOURNAL OF ELECTRONIC MATERIALS

A low temperature growth of Ca silicides on Si(100) and Si(111) substrates: Formation, structure, optical properties and energy band structure parameters

(2019) Nikolay G. Galkin et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Conductive CaSi2 transparent in the near infra-red range

(2018) Nikolay G. Galkin et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Influence of native defects on structural and electronic properties of magnesium silicide

(2017) Naomi Hirayama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Energy filtering enhancement of thermoelectric performance of nanocrystalline Cr 1−x Si x composites

(2017) A.T. Burkov et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Investigation of structural, elastic, and lattice-dynamical properties of Ca2Si, Ca2Ge, and Ca2Sn based on first-principles density functional theory

(2015) Jun-ichi Tani et al.   COMPUTATIONAL MATERIALS SCIENCE

Electronic properties of semiconducting Ca2Si silicide: From bulk to nanostructures by means of first principles calculations

(2015) D. B. Migas et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Non-doped and doped Mg stannide films on Si(111) substrates: Formation, optical, and electrical properties

(2015) Nikolay G. Galkin et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Formation and characterization of semiconductor Ca2Si layers prepared on p-type silicon covered by an amorphous silicon cap

(2012) L. Dózsa et al.   JOURNAL OF MATERIALS SCIENCE

CORRIGENDUM: "OPTICAL AND ELECTRONIC PROPERTIES OF M2Si (M = Mg, Ca AND Sr) GROWN BY REACTIVE DEPOSITION TECHNIQUE"

(2010) JUNHUA HU et al.   INTERNATIONAL JOURNAL OF MODERN PHYSICS B