Formation and characterization of semiconductor Ca2Si layers prepared on p-type silicon covered by an amorphous silicon cap

Title
Formation and characterization of semiconductor Ca2Si layers prepared on p-type silicon covered by an amorphous silicon cap
Authors
Keywords
Auger Electron Spectroscopy, Electron Energy Loss Spectroscopy, Rutherford Backscattering Spectrometry, Deep Level Transient Spectroscopy, Schottky Junction
Journal
JOURNAL OF MATERIALS SCIENCE
Volume 48, Issue 7, Pages 2872-2882
Publisher
Springer Nature
Online
2012-10-22
DOI
10.1007/s10853-012-6945-6

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