Dislocations in 4H silicon carbide

Deformation of 4H-SiC: The role of dopants

(2022) Xiaoshuang Liu et al.   APPLIED PHYSICS LETTERS

Doping-dependent nucleation of basal plane dislocations in 4H-SiC

(2022) Xiaoshuang Liu et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits

(2022) Guang Yang et al.   Journal of Semiconductors

Massive reduction of threading screw dislocations in 4H-SiC crystals grown by a hybrid method combined with solution growth and physical vapor transport growth on higher off-angle substrates

(2021) Takeshi Mitani et al.   Applied Physics Express

Theoretical study on the improvement of the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements

(2021) Yuanchao Huang et al.   Chinese Physics B

Origin and Generation Process of a Triangular Single Shockley Stacking Fault Expanding from the Surface Side in 4H-SiC PIN Diodes

(2021) Chiharu Ota et al.   JOURNAL OF ELECTRONIC MATERIALS

Structural study of single Shockley stacking faults terminated near substrate/epilayer interface in 4H-SiC

(2021) Johji Nishio et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Paving the way toward the world's first 200mm SiC pilot line

(2021) Mattia Musolino et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

A perspective on leakage current induced by threading dislocations in 4H-SiC Schottky barrier diodes

(2021) Jhong-Ren Huang et al.   MATERIALS LETTERS

Defect reduction in SiC epilayers by different substrate cleaning methods

(2021) D. Baierhofer et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Populations and propagation behaviors of pure and mixed threading screw dislocations in physical vapor transport grown 4H-SiC crystals using X-ray topography

(2020) Naoto Shinagawa et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Informative Aspects of Molten KOH Etch Pits Formed at Basal Plane Dislocations on the Surface of 4H‐SiC

(2020) Johji Nishio et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Study of Eutectic Etching Process for Defects Analysis in n type 4H SiC

(2020) Pooja Pal et al.   DEFENCE SCIENCE JOURNAL

Radiation-enhanced dislocation glide in 4H-SiC at low temperatures

(2020) E.E. Yakimov et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Defect engineering in SiC technology for high-voltage power devices

(2020) Tsunenobu Kimoto et al.   Applied Physics Express

Formation and multiplication of basal plane dislocations during physical vapor transport growth of 4H-SiC crystals

(2019) Takahiro Nakano et al.   JOURNAL OF CRYSTAL GROWTH

Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC

(2019) Johannes Steiner et al.   Materials

Modeling and Experiment of the Critical Depth of Cut at the Ductile–Brittle Transition for a 4H-SiC Single Crystal

(2019) Peng Chai et al.   Micromachines

Defect appearance on 4H-SiC homoepitaxial layers via molten KOH etching

(2019) X.F. Liu et al.   JOURNAL OF CRYSTAL GROWTH

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

(2019) P Fiorenza et al.   NANOTECHNOLOGY

Atomic-scale finishing of carbon face of single crystal SiC by combination of thermal oxidation pretreatment and slurry polishing

(2018) Hui Deng et al.   APPLIED SURFACE SCIENCE

Evaluation of the increase in threading dislocation during the initial stage of physical vapor transport growth of 4H-SiC

(2018) Hiromasa Suo et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes

(2018) T. Tawara et al.   JOURNAL OF APPLIED PHYSICS

Expansion of Shockley stacking fault observed by scanning electron microscope and partial dislocation motion in 4H-SiC

(2018) Yoshifumi Yamashita et al.   JOURNAL OF APPLIED PHYSICS

Expansion of a single Shockley stacking fault in a 4H-SiC (11 2 ¯0) epitaxial layer caused by electron beam irradiation

(2018) Yukari Ishikawa et al.   JOURNAL OF APPLIED PHYSICS

The 2018 GaN power electronics roadmap

(2018) H Amano et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Two-photon-excited, three-dimensional photoluminescence imaging and dislocation-line analysis of threading dislocations in 4H-SiC

(2018) R. Tanuma et al.   JOURNAL OF APPLIED PHYSICS

Structural characterization of the growth front of physical vapor transport grown 4H-SiC crystals using X-ray topography

(2018) Masashi Sonoda et al.   JOURNAL OF CRYSTAL GROWTH

Review of SiC crystal growth technology

(2018) Peter J Wellmann   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

A study of deformation behavior and phase transformation in 4H-SiC during nanoindentation process via molecular dynamics simulation

(2018) Bo Zhu et al.   CERAMICS INTERNATIONAL

Hardness and mechanical anisotropy of hexagonal SiC single crystal polytypes

(2018) K. Eswar Prasad et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Fabrication of 4H-SiC PiN diodes without bipolar degradation by improved device processes

(2017) Yuan Bu et al.   JOURNAL OF APPLIED PHYSICS

Fast growth of n-type 4H-SiC bulk crystal by gas-source method

(2017) Norihiro Hoshino et al.   JOURNAL OF CRYSTAL GROWTH

Nano-scale elastic-plastic properties and indentation-induced deformation of single crystal 4H-SiC

(2017) A. Nawaz et al.   Journal of the Mechanical Behavior of Biomedical Materials

A review on single photon sources in silicon carbide

(2017) A Lohrmann et al.   REPORTS ON PROGRESS IN PHYSICS

Conversion Behavior of Threading Screw Dislocations on C Face with Different Surface Morphology During 4H-SiC Solution Growth

(2016) Shiyu Xiao et al.   CRYSTAL GROWTH & DESIGN

Bulk and epitaxial growth of silicon carbide

(2016) Tsunenobu Kimoto   PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS

Deformation and removal characteristics in nanoscratching of 6H-SiC with Berkovich indenter

(2015) Binbin Meng et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Basal plane dislocation-threading edge dislocation complex dislocations in 6H-SiC single crystals

(2015) Wei Sun et al.   Materials Express

Different behavior of threading edge dislocation conversion during the solution growth of 4H–SiC depending on the Burgers vector

(2014) Shunta Harada et al.   ACTA MATERIALIA

Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method

(2014) Yuji Yamamoto et al.   Applied Physics Express

Three-Dimensional Modeling of Basal Plane Dislocations in 4H-SiC Single Crystals Grown by the Physical Vapor Transport Method

(2014) Bing Gao et al.   CRYSTAL GROWTH & DESIGN

Growth of SiC bulk crystals for application in power electronic devices - process design, 2D and 3D X-ray in situ visualization and advanced doping

(2014) Peter Wellmann et al.   CRYSTAL RESEARCH AND TECHNOLOGY

Identification of dislocations in 4H-SiC epitaxial layers and substrates using photoluminescence imaging

(2014) Chihiro Kawahara et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Mechanisms of growth and defect properties of epitaxial SiC

(2014) F. La Via et al.   Applied Physics Reviews

Stacking fault expansion from basal plane dislocations converted into threading edge dislocations in 4H-SiC epilayers under high current stress

(2013) Kazuya Konishi et al.   JOURNAL OF APPLIED PHYSICS

The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition

(2013) Shiyang Ji et al.   JOURNAL OF CRYSTAL GROWTH

Dislocation-density-based modeling of the plastic behavior of 4H–SiC single crystals using the Alexander–Haasen model

(2013) B. Gao et al.   JOURNAL OF CRYSTAL GROWTH

Incipient plasticity in 4H-SiC during quasistatic nanoindentation

(2013) Saurav Goel et al.   Journal of the Mechanical Behavior of Biomedical Materials

A Thermodynamic Mechanism for PVT Growth Phenomena of SiC Single Crystals

(2013) Tatsuo Fujimoto et al.   ECS Journal of Solid State Science and Technology

Evolution of threading screw dislocation conversion during solution growth of 4H-SiC

(2013) S. Harada et al.   APL Materials

Dislocation Revelation from ($000\bar{1}$) Carbon-face of 4H-SiC by Using Vaporized KOH at High Temperature

(2012) Yong-Zhao Yao et al.   Applied Physics Express

High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth

(2012) Yuji Yamamoto et al.   Applied Physics Express

Impact of surface morphology above threading dislocations on leakage current in 4H-SiC diodes

(2012) Hirokazu Fujiwara et al.   APPLIED PHYSICS LETTERS

Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC

(2012) H. Wang et al.   APPLIED PHYSICS LETTERS

Relationship between threading dislocation and leakage current in 4H-SiC diodes

(2012) Hirokazu Fujiwara et al.   APPLIED PHYSICS LETTERS

Tunneling Atomic Force Microscopy Studies on Surface Growth Pits Due to Dislocations in 4H-SiC Epitaxial Layers

(2012) Noboru Ohtani et al.   JOURNAL OF ELECTRONIC MATERIALS

Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H–SiC

(2011) M. Dudley et al.   APPLIED PHYSICS LETTERS

Formation and evolution of micropipes in SiC crystals

(2011) Shenghuang Lin et al.   CRYSTENGCOMM

Molten KOH Etching with Na2O2Additive for Dislocation Revelation in 4H-SiC Epilayers and Substrates

(2011) Yong-Zhao Yao et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping

(2011) Gan Feng et al.   JOURNAL OF APPLIED PHYSICS

Direct observation of basal-plane to threading-edge dislocation conversion in 4H-SiC epitaxy

(2011) Suk Chung et al.   JOURNAL OF APPLIED PHYSICS

Electronic structure analysis of threading screw dislocations in 4H–SiC using electron holography

(2011) Suk Chung et al.   JOURNAL OF APPLIED PHYSICS

Investigations of defect evolution and basal plane dislocation elimination in CVD epitaxial growth of silicon carbide on eutectic etched epilayers

(2011) Haizheng Song et al.   JOURNAL OF CRYSTAL GROWTH

Electrical characterization of 4H–SiC avalanche photodiodes containing threading edge and screw dislocations

(2010) R. A. Berechman et al.   JOURNAL OF APPLIED PHYSICS

On the driving force for recombination-induced stacking fault motion in 4H–SiC

(2010) Joshua D. Caldwell et al.   JOURNAL OF APPLIED PHYSICS

Subsurface Damage of Single Crystalline Silicon Carbide in Nanoindentation Tests

(2010) Jiwang Yan et al.   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Silicon Carbide as a Platform for Power Electronics

(2009) C. R. Eddy et al.   SCIENCE

Basal plane dislocation reduction for 8° off-cut, 4H-SiC using in situ variable temperature growth interruptions

(2008) B. L. VanMil et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B