Bias-Dependent Conduction-Induced Bimodal Weibull Distribution of the Time-Dependent Dielectric Breakdown in GaN MIS-HEMTs

Investigation of the Trap States and $V_{\text{TH}}$ Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer

(2019) Hui Sun et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Evaluation of LPCVD SiNx Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT

(2018) Yongle Qi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device

(2018) Jigang Ma et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reliability Analysis of LPCVD SiN Gate Dielectric for AlGaN/GaN MIS-HEMTs

(2017) Simon A. Jauss et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Gate Leakage Mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and Its Modeling

(2017) Gourab Dutta et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

(2015) Mengyuan Hua et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!

(2015) Herbert Schroeder   JOURNAL OF APPLIED PHYSICS

Bimodal Weibull Distribution of Metal/High-$\kappa$ Gate Stack TDDB—Insights by Scanning Tunneling Microscopy

(2011) K. S. Yew et al.   IEEE ELECTRON DEVICE LETTERS