Journal
PHOTONICS
Volume 9, Issue 7, Pages -Publisher
MDPI
DOI: 10.3390/photonics9070438
Keywords
optical power converters; laser power converters; power-over-fiber; power beaming; photovoltaic; galvanic isolation; InGaAs; InP; multijunctions semiconductor heterostructures
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This study demonstrates the high-efficiency capabilities of multijunction laser power converters for high-power applications with an optical input of around 1470 nm. InP-based photovoltaic power converting III-V semiconductor devices are designed, with 10 lattice-matched subcells, using thin InGaAs absorbing layers connected by transparent tunnel junctions. The results show that these long-wavelength power converter devices can produce electrical output voltages greater than 4-5 V, making them compatible with common electronics requirements and suitable for long-distance transmission through fiber-based optical links.
The high-efficiency capabilities of multijunction laser power converters are demonstrated for high-power applications with an optical input of around 1470 nm. The InP-based photovoltaic power converting III-V semiconductor devices are designed here, with 10 lattice-matched subcells (PT10-InGaAs/InP), using thin InGaAs absorbing layers connected by transparent tunnel junctions. The results confirm that such long-wavelength power converter devices are capable of producing electrical output voltages greater than 4-5 V. The characteristics are compatible with common electronics requirements, and the optical input is well suited for propagation over long distances through fiber-based optical links. Conversion efficiencies of similar to 49% are measured at electrical outputs exceeding 7 W for an input wavelength of 1466 nm at 21 degrees C. The Power Converter Performance Chart has been updated with these PT10-InGaAs/InP results.
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