Deep-level trap formation in Si-substituted Sr2SnO4:Sm3+ for rewritable optical information storage

Title
Deep-level trap formation in Si-substituted Sr2SnO4:Sm3+ for rewritable optical information storage
Authors
Keywords
Deep trap, Persistent luminescence, Co-doping, Information storage, Rare-earth doped materials
Journal
Materials Today Chemistry
Volume 24, Issue -, Pages 100906
Publisher
Elsevier BV
Online
2022-04-23
DOI
10.1016/j.mtchem.2022.100906

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