Analytical Modelling of Material Removal in Copper Chemical Mechanical Polishing Incorporating the Scratch Hardness of the Passivated Layer on Copper Thin Film Wafer

Material Removal and Wear Behaviour of Copper Thin Film in Ambient Air and Wet Environment by Nanoindenter

(2021) Mohit Sharma et al.   ECS Journal of Solid State Science and Technology

A theoretical model incorporating both the nano-scale material removal and wafer global uniformity during planarization process

(2017) Jing Li et al.   THIN SOLID FILMS

A molecular-scale analytic model to evaluate material removal rate in chemical mechanical planarization considering the abrasive shape

(2015) Yongguang Wang et al.   MICROELECTRONIC ENGINEERING

Semi-empirical material removal rate distribution model for SiO2 chemical mechanical polishing (CMP) processes

(2013) H.S. Lee et al.   PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY

Modeling the effects of particle deformation in chemical mechanical polishing

(2012) Xiaochun Chen et al.   APPLIED SURFACE SCIENCE

Electrochemical investigation of copper passivation kinetics and its application to low-pressure CMP modeling

(2012) Jing Li et al.   APPLIED SURFACE SCIENCE

A method for characterizing the pad surface texture and modeling its impact on the planarization in CMP

(2012) Boris Vasilev et al.   MICROELECTRONIC ENGINEERING

Modeling the Chemical-Mechanical Synergy during Copper CMP

(2010) Jing Li et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

A Material Removal Model for CMP Based on the Contact Mechanics of Pad, Abrasives, and Wafer

(2009) Dinçer Bozkaya et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Investigation of Pad Surface Topography Distribution for Material Removal Uniformity in CMP Process

(2008) Kihyun Park et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY