Charge neutral MoS2 field effect transistors through oxygen plasma treatment
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Title
Charge neutral MoS2 field effect transistors through oxygen plasma treatment
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 120, Issue 19, Pages 195702
Publisher
AIP Publishing
Online
2016-11-19
DOI
10.1063/1.4967398
References
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- (2016) Zhen Li et al. ACS Nano
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- (2016) Rohan Dhall et al. ACS Photonics
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- (2015) M. Amani et al. SCIENCE
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- (2014) Rui Cheng et al. NANO LETTERS
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- (2014) Jason S. Ross et al. Nature Nanotechnology
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- (2013) Min Sup Choi et al. Nature Communications
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