Modeling the gate-bias dependence of contact resistance in staggered organic field effect transistors based on carrier-concentration dependent mobility

Title
Modeling the gate-bias dependence of contact resistance in staggered organic field effect transistors based on carrier-concentration dependent mobility
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 119, Issue 10, Pages 105501
Publisher
AIP Publishing
Online
2016-03-10
DOI
10.1063/1.4943532

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