4.7 Article

Effect of GA+ ion beam on the stability of retained austenite in high carbon steel

Journal

MATERIALS CHARACTERIZATION
Volume 186, Issue -, Pages -

Publisher

ELSEVIER SCIENCE INC
DOI: 10.1016/j.matchar.2022.111766

Keywords

FIB-SEM; Ion implantation, EBSD, retained austenite; K110 steel; Phase transformation

Funding

  1. National Science Center, Poland [2015/17/D/ST8/01282]

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This paper presents studies on the influence of Ga+ ion beam on the stability of retained austenite in K110 cold work tool steel. The experimental results show that using low voltage and dose ion beam did not induce any phase transformation but only deformed the crystal structure of austenite, while using higher voltage and dose ion beam resulted in complete transformation of austenite. Furthermore, it was found that the crystallographic orientation between austenite and the BCC phase induced by the ion beam is not random.
This paper presents studies concerning the influence of the Ga+ ion beam on the stability of retained austenite in K110 cold work tool steel (X155CrVMo12). The material was first austenitized at 1200 C to dissolve a significant amount of the alloy's carbides to obtain the largest possible volume fraction of retained austenite, which was 93% after quenching in oil. Changes in the steel's crystal structure upon interaction with Ga+ ions were observed using a combination of SEM-FIB-EBSD techniques. Selected grains in the material were sputtered with Ga+ ions of various accelerating voltages (2 kV - 30 kV) using two different doses, namely 50 and 100 pC/mu m(2). It was found that the application of 5 kV Ga+ ion beam is enough to induce partial transformation of austenite to BCC phase. The use of higher voltages (8-30 kV) resulted in the complete transformation of austenite. Low acceleration voltages of 2 kV, even with a high dose of 500 pC/mu m(2), did not induce any phase transformation and only deformed austenite's crystal structure. Moreover, it was shown that the crystallographic orientation between austenite and the Ga+ ion beam induced BCC phase is not random.

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