Oxygen-doped zirconium nitride based transparent resistive random access memory devices fabricated by radio frequency sputtering method

Published 2016 View Full Article

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Title
Oxygen-doped zirconium nitride based transparent resistive random access memory devices fabricated by radio frequency sputtering method
Authors
Keywords
RRAM, Transparent RRAM, Oxygen-doped ZrN films
Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 675, Issue -, Pages 183-186
Publisher
Elsevier BV
Online
2016-03-19
DOI
10.1016/j.jallcom.2016.03.122

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