ZnO thin films prepared by atomic layer deposition at various temperatures from 100 to 180 °C with three-pulsed precursors in every growth cycle

Published 2016 View Full Article

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Title
ZnO thin films prepared by atomic layer deposition at various temperatures from 100 to 180 °C with three-pulsed precursors in every growth cycle
Authors
Keywords
Zinc oxide thin films, Three-pulsed precursors, Atomic layer deposition (ALD), Burstein–Moss effect, Bandgap renormalization
Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 685, Issue -, Pages 391-394
Publisher
Elsevier BV
Online
2016-05-28
DOI
10.1016/j.jallcom.2016.05.289

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