ZnO thin films prepared by atomic layer deposition at various temperatures from 100 to 180 °C with three-pulsed precursors in every growth cycle

出版年份 2016 全文链接

标题

作者

关键词

Zinc oxide thin films, Three-pulsed precursors, Atomic layer deposition (ALD), Burstein–Moss effect, Bandgap renormalization

出版物

JOURNAL OF ALLOYS AND COMPOUNDS

Volume 685, Issue -, Pages 391-394

出版商

Elsevier BV

发表日期

2016-05-28

DOI

10.1016/j.jallcom.2016.05.289

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