Compensation of p-type doping in Al-doped 4H-SiC

Theoretical study on the improvement of the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements

(2021) Yuanchao Huang et al.   Chinese Physics B

Optimization of Doping CdTe with Group-V Elements: A First-Principles Study

(2021) Baoying Dou et al.   Physical Review Applied

3.3 kV 4H-SiC DMOSFET with a source-contacted dummy gate for high-frequency applications

(2021) Kyuhyun Cha et al.   Journal of Semiconductors

First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC

(2020) Xiaolan Yan et al.   JOURNAL OF APPLIED PHYSICS

Intrinsic ferromagnetism in 4H-SiC single crystal induced by Al-doping

(2020) Zesheng Zhang et al.   Applied Physics A

A Review of SiC IGBT: Models, Fabrications, Characteristics, and Applications

(2020) Lubin Han et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC

(2019) J. Weiße et al.   AIP Advances

Assessing the Role of Fluorine in the Performance of AlxGa1−xN/GaN High-Electron-Mobility Transistors from First-Principles Calculations

(2019) Rong Wang et al.   Physical Review Applied

Sublimation growth and property characterization of p-type 4H-SiC by Al B co-doping technique

(2019) Xuejian Xie et al.   SCRIPTA MATERIALIA

Investigation of 1200 V SiC MOSFETs’ Surge Reliability

(2019) Huan Li et al.   Micromachines

Incomplete ionization in aluminum-doped 4H-silicon carbide

(2019) C. Darmody et al.   JOURNAL OF APPLIED PHYSICS

Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study

(2018) Ivana Capan et al.   JOURNAL OF APPLIED PHYSICS

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

(2018) Fabrizio Roccaforte et al.   MICROELECTRONIC ENGINEERING

Induced defect levels of P and Al vacancy-complexes in 4H-SiC: A hybrid functional study

(2018) E. Igumbor et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Growth of P-type 4H–SiC single crystals by physical vapor transport using aluminum and nitrogen co-doping

(2017) Kazuma Eto et al.   JOURNAL OF CRYSTAL GROWTH

Hall scattering factors in p-type 4H-SiC with various doping concentrations

(2016) Satoshi Asada et al.   Applied Physics Express

Hopping conduction range of heavily Al-doped 4H-SiC thick epilayers grown by CVD

(2015) Shiyang Ji et al.   Applied Physics Express

Defects as qubits in3C−and4H−SiC

(2015) L. Gordon et al.   PHYSICAL REVIEW B

Design and Experimental Study of 4H-SiC Trenched Junction Barrier Schottky Diodes

(2014)   IEEE TRANSACTIONS ON ELECTRON DEVICES

Tuning the Fermi level beyond the equilibrium doping limit through quenching: The case of CdTe

(2014) Ji-Hui Yang et al.   PHYSICAL REVIEW B

The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition

(2013) Shiyang Ji et al.   JOURNAL OF CRYSTAL GROWTH

Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC

(2012) Roberta Nipoti et al.   JOURNAL OF MATERIALS RESEARCH

Negative-USystem of Carbon Vacancy in4H-SiC

(2012) N. T. Son et al.   PHYSICAL REVIEW LETTERS

Carrier density and compensation in semiconductors with multiple dopants and multiple transition energy levels: Case of Cu impurities in CdTe

(2011) Jie Ma et al.   PHYSICAL REVIEW B

High-Voltage n-Channel IGBTs on Free-Standing 4H-SiC Epilayers

(2010) Xiaokun Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

FullyAb InitioFinite-Size Corrections for Charged-Defect Supercell Calculations

(2009) Christoph Freysoldt et al.   PHYSICAL REVIEW LETTERS

Characterization, Modeling, and Application of 10-kV SiC MOSFET

(2008) Jun Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES