Metal oxide resistive random access memory based synaptic devices for brain-inspired computing

Published 2016 View Full Article

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Title
Metal oxide resistive random access memory based synaptic devices for brain-inspired computing
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 55, Issue 4S, Pages 04EA06
Publisher
Japan Society of Applied Physics
Online
2016-03-15
DOI
10.7567/jjap.55.04ea06

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