Metal oxide resistive random access memory based synaptic devices for brain-inspired computing

标题
Metal oxide resistive random access memory based synaptic devices for brain-inspired computing
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 55, Issue 4S, Pages 04EA06
出版商
Japan Society of Applied Physics
发表日期
2016-03-15
DOI
10.7567/jjap.55.04ea06

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