Article
Physics, Applied
P. Monalisha, Shengyao Li, Tianli Jin, P. S. Anil Kumar, S. N. Piramanayagam
Summary: This study presents a metallic channel-based three-terminal electrolyte-gated artificial synapse capable of non-volatile rewritable conductance states and simulating various synaptic behaviors. The switching between short-term and long-term memory regimes has been successfully demonstrated through repeated training.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Chemistry, Multidisciplinary
Yue Wang, Kun Wang, Xiangyu Hu, Ya'kun Wang, Wandong Gao, Yiqiang Zhang, Zhenghui Liu, Yi Zheng, Ke Xu, Deren Yang, Xiaodong Pi
Summary: This study demonstrates the simultaneous modulation and visualization of synaptic events using optically stimulated synaptic devices based on the hetero-structure of fluorescent silicon quantum dots and monolayer molybdenum disulfide. These devices can mimic neural population coding and identify defective devices through the absence of fluorescence. This research has important implications for the development of synaptic devices.
Article
Chemistry, Physical
Junyao Zhang, Tianli Sun, Sheng Zeng, Dandan Hao, Ben Yang, Shilei Dai, Dapeng Liu, Lize Xiong, Cairong Zhao, Jia Huang
Summary: A multi-functional and energy-efficient optoelectronic synaptic transistor has been designed to achieve the required synaptic plasticity with both photonic and electric modulation modes in one device.
Article
Nanoscience & Nanotechnology
Fan Xia, Tian Xia, Li Xiang, Sujuan Ding, Shuo Li, Yucheng Yin, Meiqi Xi, Chuanhong Jin, Xuelei Liang, Youfan Hu
Summary: This study demonstrates the realization of flexible artificial synapses with good plasticity and stability using carbon nanotube-based ferroelectric synaptic transistors, generating multiple distinguishable conductance states. The neuromorphic devices show long-term stability and achieve a pattern recognition accuracy of up to 95.24% in simulations based on artificial neural networks.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Review
Chemistry, Multidisciplinary
Guiming Cao, Peng Meng, Jiangang Chen, Haishi Liu, Renji Bian, Chao Zhu, Fucai Liu, Zheng Liu
Summary: This article provides a comprehensive review of synaptic devices based on 2D materials, including their advantages, challenges, and future development strategies.
ADVANCED FUNCTIONAL MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Ravindra Singh Bisht, Jaeseoung Park, Haoming Yu, Chen Wu, Nikhil Tilak, Sylvie Rangan, Tae J. Park, Yifan Yuan, Sarmistha Das, Uday Goteti, Hee Taek Yi, Hussein Hijazi, Abdullah Al-Mahboob, Jerzy T. Sadowski, Hua Zhou, Seongshik Oh, Eva Y. Andrei, Monica T. Allen, Duygu Kuzum, Alex Frano, Robert C. Dynes, Shriram Ramanathan
Summary: A single bias can tune the coupling strength between neighboring cells in a network of hydrogen-doped perovskite nickelate devices, suggesting potential use for neuromorphic learning and hardware implementation of artificial intelligence. Graded proton distribution in the inhomogeneous medium of the hydrogen-doped nickelate film enables this behavior, as shown by electrical transport measurements and spatially resolved diffraction and nanoprobe X-ray and scanning microwave impedance spectroscopic studies. Signal integration is further demonstrated through the coupling of various junctions.
Article
Nanoscience & Nanotechnology
Duho Kim, Yu-Rim Jeon, Boncheol Ku, Chulwon Chung, Tae Heun Kim, Sanghyeok Yang, Uiyeon Won, Taeho Jeong, Changhwan Choi
Summary: Neuromorphic computing has attracted attention for overcoming the limitations of von-Neumann computing, with analog synaptic devices playing a crucial role in hardware-based artificial neuromorphic devices. This study demonstrates the synaptic characteristics of a ferroelectric material-based thin-film transistor, showing successful emulation of short-term and long-term plasticity. The research suggests that ferroelectric transistors can serve as alternative artificial synapses with high linearity and pattern recognition accuracy.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Physics, Applied
Liqiang Guo, Qian Dong, Zhiyuan Li, Weilin Wang, Guanggui Cheng, Minchang Wang
Summary: This study introduces albumen-gate based synaptic transistors, showing strong electrical properties and the ability to simulate basic biological synaptic functions, indicating great potential applications in 'green' neuromorphic platforms.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Materials Science, Multidisciplinary
Qin Gao, Jiangshun Huang, Juan Gao, Xueli Geng, Yuhang Ji, Haoze Li, Guoxing Wang, Bo Liang, Mei Wang, Zhisong Xiao, Ying Zhu, Paul K. Chu, Anping Huang
Summary: In this study, a functionalized honeycomb-like synaptic memristor (HLSM) was successfully fabricated, and the synaptic properties, such as short-term and long-term plasticity, were observed and controlled without gate voltage regulation. An artificial neural network (ANN) based on the potentiating/depressing characteristics showed an improved recognition rate from 54.2% to 91.8% simply by adjusting the input frequency.
MATERIALS TODAY PHYSICS
(2023)
Article
Nanoscience & Nanotechnology
Kuan-Ting Chen, Li-Chung Shih, Shi-Cheng Mao, Jen-Sue Chen
Summary: Neuromorphic computing is a promising approach to reduce latency and energy consumption in massive data processing. We have developed an ITO/TaOx-based synaptic capacitor and transistor that can adjust synaptic weights. The capacitor showed better performance in handwritten digit recognition and consumed less energy compared to the transistor. These findings demonstrate the potential of the ITO/TaOx-based capacitor in capacitive neural networks.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Engineering, Multidisciplinary
Dong-Hee Lee, Hwi-Su Kim, Ki-Woong Park, Hamin Park, Won-Ju Cho
Summary: In this study, the synaptic behavior of artificial synaptic transistors is enhanced using nanowire-type polysilicon channel structures, which exhibit efficient modulation of channel conductance and larger hysteresis window compared to film-type synaptic transistors. These NW-type synaptic transistors also demonstrate superior short-term facilitation and long-term memory transition, making them suitable for artificial neural networks. Additionally, they show gradual potentiation/depression characteristics and improved pattern recognition rate.
Article
Materials Science, Multidisciplinary
Peng Shi, Dong Wang, Tongliang Yu, Ruofei Xing, Zhenfa Wu, Shishen Yan, Lin Wei, Yanxue Chen, Huixue Ren, Chunfeng Yu, Fangjun Li
Summary: A novel three-terminal synaptic transistor was designed and constructed, achieving nonvolatile conductance modulation through electrolyte gating and successfully mimicking synaptic learning functions.
MATERIALS & DESIGN
(2021)
Article
Chemistry, Multidisciplinary
Tianshi Zhao, Chun Zhao, Wangying Xu, Yina Liu, Hao Gao, Ivona Z. Mitrovic, Eng Gee Lim, Li Yang, Ce Zhou Zhao
Summary: This paper proposes a photoelectronic transistor that mimics biological synaptic behaviors and demonstrates its typical synaptic behaviors and reliable memory stability through voltage testing. The UV-responsive synaptic properties of the MXenes floating gated transistor and its applications are measured and realized for the first time, showing great potential in bio-imitation vision applications. Through simulation based on an artificial neural network algorithm, the device successfully achieves recognition of handwritten digital images, providing a highly feasible solution for applying artificial synaptic devices to hardware neuromorphic networks.
ADVANCED FUNCTIONAL MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Zehui Peng, Facai Wu, Li Jiang, Guangsen Cao, Bei Jiang, Gong Cheng, Shanwu Ke, Kuan-Chang Chang, Lei Li, Cong Ye
Summary: Tri-layer HfO2/BiFeO3/BFO/HfO2 memristors, designed with traditional ferroelectric BFO layers and thickness optimization, exhibit excellent resistive switching performance, multi-level storage ability, and successful realization of essential synaptic functions. Conductive filaments composed of Hafnium single crystal are observed to enhance RS behavior, showing promising potential for neuromorphic computing.
ADVANCED FUNCTIONAL MATERIALS
(2021)
Article
Nanoscience & Nanotechnology
Wei Sheng Wang, Zhi Wen Shi, Xin Li Chen, Yan Li, Hui Xiao, Yu Heng Zeng, Xiao Dong Pi, Li Qiang Zhu
Summary: In this study, nanocellulose-gated indium tin oxide neuromorphic transistors were fabricated to mimic short-term synaptic plasticities. The device exhibited good electrical performance and achieved an excellent recognition accuracy of 92.93% using a linear synaptic weight updating strategy. Moreover, the concept of anxiety disorder behavior was successfully emulated through unique interfacial protonic coupling.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Physics, Condensed Matter
Minna Theres James, Shoubhik Mandal, Nirmal K. Sebastian, Pramita Mishra, R. Ganesan, P. S. Anil Kumar
Summary: This study reports the temperature-dependent structural characterization of type-II Dirac semimetal NiTe2 using bulk single crystal and 200 nm thick nanoflakes. X-ray diffraction and Rietveld refinement analysis confirm excellent crystallinity and linear thermal expansion coefficient along different lattice directions. Raman spectra analysis shows non-linear variations in phonon frequency and full-width half maxima of certain modes.
JOURNAL OF PHYSICS-CONDENSED MATTER
(2023)
Article
Physics, Condensed Matter
Shoubhik Mandal, Debarghya Mallick, Yugandhar Bitla, R. Ganesan, P. S. Anil Kumar
Summary: Recently, it has been shown that Bi1Te1 is a dual topological insulator with both quasi-1D surface states and topological crystalline insulating surface states. Moreover, Bi1Te1 is predicted to be a higher order topological insulator. However, experimental studies on the Bi1Te1 single crystal and its doping effects are lacking. In this study, magneto-transport measurements were performed on exfoliated microflakes and Sb-doped Bi1Te1 single crystals. The results revealed the presence of decoupled topological surface states and provided insights into the thickness-dependent dephasing mechanism and the strength of bulk-surface coupling.
JOURNAL OF PHYSICS-CONDENSED MATTER
(2023)
Article
Nanoscience & Nanotechnology
P. Monalisha, Shengyao Li, Tianli Jin, P. S. Anil Kumar, S. N. Piramanayagam
Summary: Electrolyte-gated transistors (EGTs) are considered essential components in neuromorphic computing systems for low-power artificial intelligence. In this study, a three-terminal synaptic transistor based on ruthenium-doped cobalt ferrite (CRFO) thin films by electrolyte gating was developed, demonstrating multilevel non-volatile conductance states for analog computing and high-density storage. Furthermore, the proposed synaptic transistor exhibited essential synaptic behavior, including spike amplitude-dependent plasticity, spike duration-dependent plasticity, long-term potentiation, and long-term depression.
Article
Materials Science, Multidisciplinary
Utkarsh Shashank, Angshuman Deka, Chen Ye, Surbhi Gupta, Rohit Medwal, Rajdeep Singh Rawat, Hironori Asada, X. Renshaw Wang, Yasuhiro Fukuma
Summary: This study focuses on the quasi-two-dimensional electron gas between insulating SrTiO3 and two types of aluminum-based amorphous insulators, and estimates their charge-to-spin conversion efficiency. The contribution of oxygen vacancy is investigated. A mechanism to explain the experimental results is proposed and a reliable method to estimate the thickness of the quasi-two-dimensional electron gas is developed. The findings show the significance of defects in charge-spin interconversion and offer a way to enhance it through defect engineering.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Shengyao Li, Bojun Miao, Xueyan Wang, Siew Lang Teo, Ming Lin, Qiang Zhu, S. N. Piramanayagam, X. Renshaw Wang
Summary: This study investigates the synaptic modulation based on an electrochemical transistor with a metallic channel of ferromagnetic CoPt alloy. It demonstrates the simultaneous modulation of conductivity and magnetism, as well as essential synaptic functionalities such as depression and potentiation of synaptic weight.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2023)
Article
Nanoscience & Nanotechnology
Sabpreet Bhatti, H. K. Tan, M. I. Sim, V. L. Zhang, M. Sall, Z. X. Xing, R. Juge, R. Mahendiran, A. Soumyanarayanan, S. T. Lim, D. Ravelosona, S. N. Piramanayagam
Summary: Magnetic skyrmions are promising candidates for computing and memory applications. By altering the interfacial magnetic properties, the behaviors of skyrmions can be tuned. However, the relationship between interface structure and skyrmion properties is not straightforward, requiring a comprehensive understanding for better controllability.
Review
Chemistry, Multidisciplinary
Allen Jian Yang, Su-Xi Wang, Jianwei Xu, Xian Jun Loh, Qiang Zhu, Xiao Renshaw Wang
Summary: As Si-based transistors scale down to atomic dimensions, the traditional principle of current electronics faces challenges in meeting the future requirements of speed, switching energy, heat dissipation, packing density, and functionalities. Heterogeneous integration, which allows unrestricted stacking of dissimilar materials and functionalities at an atomic scale, presents opportunities for next-generation electronics. In this paper, the combination of perovskite oxides and 2DLMs for heterogeneous integration has shown unexpected functionalities and enhanced device performance. This review explores the recent progress of this integration from fabrication and interfacial properties to electronic applications, challenges, and future prospects.
Article
Chemistry, Multidisciplinary
Allen Jian Yang, Liang Wu, Yanran Liu, Xinyu Zhang, Kun Han, Ying Huang, Shengyao Li, Xian Jun Loh, Qiang Zhu, Rui Su, Ce-Wen Nan, Xiao Renshaw Wang
Summary: In this study, van der Waals heterostructures of LSMO and MoS2 were successfully fabricated on Si substrates, showing multiple functionalities. Freestanding LSMO membranes and van der Waals force-mediated transfer were used to overcome the growth process issues. The LSMO-MoS2 heterostructures exhibit gate-tunable rectifying behavior, photodiode characteristics, and electrically tunable magnetoresponse at room temperature due to the colossal magnetoresistance of LSMO.
ADVANCED MATERIALS
(2023)
Editorial Material
Materials Science, Multidisciplinary
Zhen Huang, Xiao Renshaw Wang, Shixiong Zhang, Chuan Li
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2023)
Article
Nanoscience & Nanotechnology
Muireann de h-Ora, Aliona Nicolenco, P. Monalisha, Tuhin Maity, Bonan Zhu, Shinbuhm Lee, Zhuotong Sun, Jordi Sort, Judith MacManus-Driscoll
Summary: Tuning the properties of magnetic materials through voltage-driven ion migration allows for energy-efficient and non-volatile magnetic memory and neuromorphic computing. We demonstrated significant changes in magnetic moment and coercivity in an array of CFO nanopillar electrodes with an applied voltage, along with fast magneto-ionic response and high cyclability. The magnetic switching is attributed to the modulation of oxygen content in CFO, and the self-assembled nanopillar structures emulate various synaptic behaviors for analog computing and high-density storage. CFO nanopillar arrays have the potential to be used as interconnected synapses for advanced neuromorphic computing applications.
Article
Physics, Applied
Kun Han, Minmin Xie, Yufei Mei, Renju Lin, Liqiang Xu, Pingfan Chen, Penghui Yin, Shengwei Zeng, Binghui Ge, Ariando Ariando, Dongsheng Song, X. Renshaw Wang, Wenbin Wu, Zhen Huang
Summary: The discovery of superconductivity in doped infinite-layer nickelates has attracted great interest. In this study, a metal-insulator-superconductor transition is demonstrated by engineering the process of topotactic reduction. The researchers found an insulating intermediate state within the transition, as well as optimizing the superconductivity by fully reducing the sample. This study provides valuable insight into understanding and manipulating superconductivity in infinite-layer nickelates.
APPLIED PHYSICS LETTERS
(2023)
Article
Nanoscience & Nanotechnology
Mithun Ghosh, P. D. Babu, P. S. Anil Kumar
Summary: In this study, the longitudinal resistivity, anisotropic magnetoresistance (MR), and Hall effect of epitaxial Nd2Ir2O7 (111) thin films were investigated. The results showed that the magnetic structure of Ir4+ 5d moments could be tuned by applying a magnetic field along different crystallographic directions. A large spontaneous Hall effect (SHE) signal and a topological-like Hall signal were observed, indicating the presence of Weyl semimetallic phase and multiple Weyl nodes in the electronic band structure of the films.
Article
Chemistry, Multidisciplinary
Durgesh Kumar, Hong Jing Chung, JianPeng Chan, Tianli Jin, Sze Ter Lim, Stuart S. P. Parkin, Rachid Sbiaa, S. N. Piramanayagam
Summary: Neuromorphic computing is a potential technology for low-power intelligent devices. Spintronics-based neurons and synapses have higher endurance, but low-energy domain wall devices are preferred for low-power devices. By engineering the beta-W spin-orbit coupling material, we achieve low-current density DW motion with ultralow energy consumption and current density reduction.