Ground and first five low-lying excited states related optical absorption in In.1Ga.9N/GaN double quantum wells: Temperature and coupling impacts
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Title
Ground and first five low-lying excited states related optical absorption in In.1Ga.9N/GaN double quantum wells: Temperature and coupling impacts
Authors
Keywords
DQWs, InGaN, Impurity, Size, Temperature, Optical absorption
Journal
SOLID STATE COMMUNICATIONS
Volume 338, Issue -, Pages 114464
Publisher
Elsevier BV
Online
2021-08-06
DOI
10.1016/j.ssc.2021.114464
References
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