Ground and first five low-lying excited states related optical absorption in In.1Ga.9N/GaN double quantum wells: Temperature and coupling impacts
出版年份 2021 全文链接
标题
Ground and first five low-lying excited states related optical absorption in In.1Ga.9N/GaN double quantum wells: Temperature and coupling impacts
作者
关键词
DQWs, InGaN, Impurity, Size, Temperature, Optical absorption
出版物
SOLID STATE COMMUNICATIONS
Volume 338, Issue -, Pages 114464
出版商
Elsevier BV
发表日期
2021-08-06
DOI
10.1016/j.ssc.2021.114464
参考文献
相关参考文献
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