Article
Nanoscience & Nanotechnology
Lihua He, Enlong Li, Weixin He, Yujie Yan, Shuqiong Lan, Rengjian Yu, Huipeng Chen, Tailiang Guo
Summary: The novel layered hybrid structure OTFT nonvolatile memory combines the advantages of ferroelectric and floating gate memory, exhibiting high on-state current, low off-state current, excellent switch ratio, and retention characteristic, as well as a superior memory window. This fine-structured OTFT memory opens up a unique path to meet the growing demand in the microelectronic industry.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Jing Chen, Guanhua Dun, Jianguo Hu, Zhu Lin, Yuhao Wang, Tian Lu, Ping Li, Tiantian Wei, Junqiang Zhu, Jing Wang, Xiyou Li, Xiao-Ming Wu, Yi Yang, Tian-Ling Ren
Summary: In today's information age, high performance nonvolatile memory devices are crucial. Existing devices suffer from limitations such as low speed, low capacity, short retention time, and complex preparation process. This research presents a nonvolatile floating-gate-like memory device based on a transistor using the polarization effect of ferroelectric material PZT for regulating tunneling electrons. The polarized tunneling transistor (PTT) demonstrates ultrafast programming/erasing speed, long retention time, and a simple fabrication process, providing guidelines for future development of ultrafast nonvolatile memory devices.
Article
Chemistry, Multidisciplinary
Mengwei Si, Zhuocheng Zhang, Sou-Chi Chang, Nazila Haratipour, Dongqi Zheng, Junkang Li, Uygar E. Avci, Peide D. Ye
Summary: In this study, a ferroelectric semiconductor junction with a metal/α-In2Se3/Si structure was proposed and experimentally demonstrated. The high-performance c-FSJ showed an on/off ratio > 10^4 at room temperature and > 10^3 at 140 degrees C, with retention > 10^4 s and endurance > 10^6 cycles. By introducing a metal/α-In2Se3/insulator/metal structure, the on/off ratio of the α-In2Se3 asymmetric FSJs can be further enhanced to >10^8.
Article
Engineering, Electrical & Electronic
Ke-Jing Lee, Tsung-Yu Yang, Dei-Wei Chou, Yeong-Her Wang
Summary: This study demonstrates a pentacene-based nonvolatile memory using a ferroelectric poly (vinylidene fluoride-trifluoroethylene)/Barium Zirconate Titanate as a hybrid gate dielectric. By stacking the BZT and the P(VDF-TrFE), leakage current can be effectively reduced and the thin film interface quality can be improved.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Zijie Zheng, Leming Jiao, Dong Zhang, Chen Sun, Zuopu Zhou, Xiaolin Wang, Gan Liu, Qiwen Kong, Yue Chen, Kai Ni, Xiao Gong
Summary: By adjusting the area ratio and channel thickness, we were able to extend the memory window of the MFMIS FeFET and develop a BEOL-compatible AFeFET with the same structure, demonstrating their reliability.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Review
Polymer Science
Junhwan Choi, Hocheon Yoo
Summary: This paper reviews recent progress in 2D semiconductor field-effect transistors (FETs) using a wide range of polymeric gate dielectric materials. By exploiting appropriate materials and processes, polymer gate dielectrics have enhanced the performance of 2D semiconductor FETs and enabled the development of versatile device structures in energy-efficient ways. In addition, this review highlights the applications of FET-based functional electronic devices in flash memory devices, photodetectors, ferroelectric memory devices, and flexible electronics. Challenges and opportunities for developing high-performance FETs based on 2D semiconductors and polymer gate dielectrics and realizing their practical applications are also outlined.
Article
Engineering, Electrical & Electronic
Yuan-Yu Huang, Po-Tsang Huang, Po-Yi Lee, Pin Su
Summary: This brief presents a new approach for logic-in-memory using complementary FeFET (CFeFET) which can serve as a 2-to-1 multiplexer and a reconfigurable and nonvolatile multifunction logic gate. The logic functionality of reconfigurable AND/OR/XOR is demonstrated through calibrated SPICE simulation. This study provides insights and facilitates future data-centric computing with advanced FeFET technologies.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Chemistry, Multidisciplinary
Mor Mordechai Dahan, Halid Mulaosmanovic, Or Levit, Stefan Dunkel, Sven Beyer, Eilam Yalon
Summary: The discovery of ferroelectric doped HfO2 enables the development of scalable and CMOS-compatible ferroelectric field-effect transistor (FeFET) technology, which has the potential to meet the demand for fast, low-power, low-cost, and high-density nonvolatile memory and neuromorphic devices. This study demonstrates that a single subnanosecond pulse can fully switch HfO2-based FeFET, revealing the high-speed capabilities of FeFETs and shedding light on the fundamental polarization switching speed limits and kinetics.
Article
Chemistry, Multidisciplinary
Prashant Singh, Sungpyo Baek, Hyun Ho Yoo, Jingjie Niu, Jin-Hong Park, Sungjoo Lee
Summary: 2D van der Waal heterostructures (vdWHs) show potential in developing FeFETs with long data retention and endurance characteristics.
Article
Engineering, Electrical & Electronic
Meili Xu, Weihao Qi, Shizhang Li, Wei Wang
Summary: The article presents a high mobility polymer semiconductor-based Fe-OFET NVM that operates effectively at low programming/erasing voltages. By building a thin bilayer gate insulator and a processing-compatible tri-layered core architecture, the issue of voltages in Fe-OFET NVMs is addressed. The use of ultrathin PMMA improves the performance of Fe-OFET NVMs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
You-Sheng Liu, Pin Su
Summary: This article investigates how the dimensional scaling of ferroelectric field-effect transistor (FeFET) nonvolatile memory (NVM) is impacted by variations in interface trapped-charge, particularly under scenarios of uniform and random ferroelectric-dielectric (FE-DE) phase distribution. The study found that higher trap density leads to decreased memory window (MW) and read margin, with FeFET devices with scaled channel width being more vulnerable to trapped-charge variations. Additionally, in the presence of FE-DE phase variation, trapped charges mainly affect MW degradation for high MW instances as trap density increases, significantly worsening the worst case MW. Consideration of increased sigma MW due to random interface trapped charges is also necessary when scaling down the interfacial layer thickness of FeFET devices to increase MW. This study provides insights for advanced FeFET NVM device design.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Nanoscience & Nanotechnology
Pejman Ghasemi, Mohammad Javad Sharifi
Summary: This work reports on the fabrication of an optoelectronic memcapacitor by manipulating ferroelectric properties through the ferroelectric-semiconductor interface, showing stable memory states and light-sensitive capacitive characteristics in the device.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Engineering, Electrical & Electronic
William Cheng-Yu Ma, Chun-Jung Su, Kuo-Hsing Kao, Yao-Jen Lee, Ju-Heng Lin, Pin-Hua Wu, Jui-Che Chang, Cheng-Lun Yen, Hsin-Chun Tseng, Hsu-Tang Liao, Yu-Wen Chou, Min-Yu Chiu, Yan-Qing Chen
Summary: This work demonstrates the construction of nonvolatile memory based on tunnel thin-film transistors and a ferroelectric HfZrOx layer. The memory exhibits sufficient electrical performance and can be integrated with smart wearable devices for edge computing applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Chemistry, Multidisciplinary
Junyi Liao, Wen Wen, Juanxia Wu, Yaming Zhou, Sabir Hussain, Haowen Hu, Jiawei Li, Adeel Liaqat, Hongwei Zhu, Liying Jiao, Qiang Zheng, Liming Xie
Summary: We have designed an in-memory computing device, MOfeS-FET, based on van der Waals ferroelectric semiconductor (InSe), which integrates memory and logic functions in the same material. It shows long retention time, high on/off ratios, stable cyclic endurance, and is capable of performing inverter, programmable NAND, and NOR Boolean logic operations with nonvolatile storage of the results.
Review
Nanoscience & Nanotechnology
Halid Mulaosmanovic, Evelyn T. Breyer, Stefan Dunkel, Sven Beyer, Thomas Mikolajick, Stefan Slesazeck
Summary: This article reviews the recent progress of ferroelectric hafnium oxide (HfO2) based ferroelectric field-effect transistors (FeFETs) in nonvolatile memory applications, including operation principles, switching mechanisms, performance metrics, and explores their development trends in alternative applications such as neuromorphic computing, in-memory computing, and radiofrequency devices.
Article
Engineering, Electrical & Electronic
Chao Wu, Yongping Dan, Wei Wang, Xiangyang Lu, Xinqiang Wang
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2018)
Article
Materials Science, Multidisciplinary
Meili Xu, Shuxu Guo, Ting Xu, Wenfa Xie, Wei Wang
ORGANIC ELECTRONICS
(2019)
Article
Nanoscience & Nanotechnology
Ting Xu, Jiawei Zou, Shuxu Guo, Weihao Qi, Shizhang Li, Meili Xu, Wenfa Xie, Zhanchen Cui, Wei Wang
ADVANCED ELECTRONIC MATERIALS
(2019)
Article
Materials Science, Multidisciplinary
Jiawei Zou, Ting Xu, Jiufu Zhu, Zuosen Shi, Wei Wang, Zhanchen Cui
ORGANIC ELECTRONICS
(2019)
Article
Physics, Applied
Ting Xu, Shuxu Guo, Weihao Qi, Shizhang Li, Meili Xu, Wenfa Xie, Wei Wang
APPLIED PHYSICS LETTERS
(2020)
Article
Nanoscience & Nanotechnology
Ting Xu, Shuxu Guo, Weihao Qi, Shizhang Li, Meili Xu, Wei Wang
ACS APPLIED MATERIALS & INTERFACES
(2020)
Article
Materials Science, Multidisciplinary
Ming-Hui An, Ran Ding, Gao-Da Ye, Qin-Cheng Zhu, Ya-Nan Wang, Bin Xu, Mei-Li Xu, Xue-Peng Wang, Wei Wang, Jing Feng, Hong-Bo Sun
Summary: Organic single-crystalline semiconductors have attracted significant attention in the field of organic electronics and optoelectronic devices due to their highly ordered structure, high carrier mobility, and low impurity content. The molecular doping technique has shown potential in optimizing the optical and electrical properties of organic semiconductors, with the use of fluorescent dye-molecules as emissive dopants being able to tune emission color. The controllable molecular doping approach can manipulate charge carrier transport properties in organic single crystals, potentially leading to balanced carrier transport and improved device performance.
ORGANIC ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Meili Xu, Weihao Qi, Shizhang Li, Wei Wang
Summary: The article presents a high mobility polymer semiconductor-based Fe-OFET NVM that operates effectively at low programming/erasing voltages. By building a thin bilayer gate insulator and a processing-compatible tri-layered core architecture, the issue of voltages in Fe-OFET NVMs is addressed. The use of ultrathin PMMA improves the performance of Fe-OFET NVMs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Materials Science, Multidisciplinary
Weihao Qi, Qingling Xu, Zhang Yiqi, Yin Ding, Jing Su, Wei Wang
Summary: In this work, flexible organic thin-film transistors (OTFTs) with low-voltage operation, high field-effect mobility and good operating stability were achieved by elaborately designing a tri-layer gate dielectric. The tri-layer gate dielectric increased gate capacitance per unit area, suppressed polarization effect and charge trapping, leading to improved field-effect mobility and operating stability. The flexible OTFTs exhibited excellent performances at low operating voltages and maintained mechanical flexibility.
FLEXIBLE AND PRINTED ELECTRONICS
(2022)
Article
Physics, Applied
Meili Xu, Weihao Qi, Wenfa Xie, Wei Wang
Summary: This article proposes a method for achieving high-speed, low-voltage P/E in an organic transistor-based NVM and investigates the physical mechanisms behind it. The experimental results show that high-performance flexible 2-bit NVMs are obtained, with low P/E voltage, fast switching capability, high mobility, stable retention time, reliable endurance, and good mechanical bending durability.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Meili Xu, Wenfa Xie, Wei Wang
Summary: In this letter, the development of four-valued logic circuits based on four-level organic thin-film transistor nonvolatile memories (OTFT-NVMs) is demonstrated for the first time. High-performance and stable results are achieved, and reliable quaternary logic operations are performed by connecting the four-level OTFT-NVMs with load resistance.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Multidisciplinary Sciences
Qingyang Zhang, Mengxin Xu, Liming Zhou, Shihao Liu, Wei Wang, Letian Zhang, Wenfa Xie, Cunjiang Yu
Summary: The article reports the development of a low-cost flexible organic mechanoluminophore device. The device is constructed by integrating a high-efficiency, high-contrast top-emitting organic light-emitting device and a piezoelectric generator on a thin polymer substrate. The authors have demonstrated that the device is discernible under an ambient illumination as high as 3000 lux through optimization of device design and bending stress.
NATURE COMMUNICATIONS
(2023)
Article
Materials Science, Multidisciplinary
Jiawei Zou, Shizhang Li, He Wang, Wei Wang, Zuosen Shi, Yuhang Jiang, Zhanchen Cui, Donghang Yan
JOURNAL OF MATERIALS CHEMISTRY C
(2019)
Article
Materials Science, Multidisciplinary
Meili Xu, Xindong Zhang, Shizhang Li, Ting Xu, Wenfa Xie, Wei Wang
JOURNAL OF MATERIALS CHEMISTRY C
(2019)
