Journal
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 10, Pages 1528-1531Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3103774
Keywords
Polymer memtransistors; polymer memristors; heterojunction; electrochemical doping
Categories
Funding
- National Key Research and Development Program of China [2019YFE0124200]
- National Natural Science Foundation of China [62074105]
- Collaborative Innovation Center of Suzhou Nano Science and Technology
- 111 Project
- Joint International Research Laboratory of Carbon-Based Functional Materials and Devices
Ask authors/readers for more resources
Polymer thin film memtransistors were successfully fabricated using a solution-processed bilayer structure, showing ion-carrier exchange heterojunction. The device exhibited memristive characteristics in both vertical and horizontal directions due to the temporal and spatial evolution of ion-carrier exchange, with the horizontal conductivity being significantly higher than the vertical one. These unique features may enable promising emulation of synaptic interactions based on polymer functional thin films.
Polymer thin film memtransistors were realized with a solution-processed bilayer structure, which manifested as the ion-carrier exchange heterojunction. The temporal and spatial evolution of the ion-carrier exchange in the devices resulted in the memristive characteristics in both vertical and horizontal directions, and the effective horizontal conductivity could be several orders higher than the vertical one. The device features may pave a promising way for emulating synaptic interactions based on a polymer functional thin film.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
