Property approach of Si based ZnO films under thermal shock

ZnO and Al-doped ZnO (AZO) films were deposited on p-Si(100) wafers using magnetron sputtering, the effect of thermal shock on Si based films and its interface were evaluated by various characterization methods such as insitu nanoscratch, atomic force microscope (AFM), X-ray diffraction (XRD), fourier transform infrared (FTIR) spectra and ultraviolet-visible diffuse reflectance spectroscopy (UV-DRS). The results show the adhesion strength of Si/ZnO interface is relatively stable under thermal shock, the surface grains of Si coated ZnO form dense clusters then refine them. XRD and FTIR show Si based films exhibit (002) orientation with good structural stability related to Zn-O bond, the interfacial reactions of Si based films could experience strong interaction through Si, Zn and O atoms located at Si/ZnO interface during thermal shock. Moreover, some comparatively prominent peaks are observed by UV-DRS, which caused by Si interacted with ZnO, the AZO films deposited on quartz glass substrates illustrate the optical properties are obviously influenced and degraded after thermal shock.

Automated summary

The study shows that the adhesion strength of the Si/ZnO interface is relatively stable under thermal shock, indicating a high structural stability of Si-based films. During thermal shock, the interfacial reactions of Si-based films can experience strong interaction through Si, Zn, and O atoms.