Controllable material removal behavior of 6H-SiC wafer in nanoscale polishing
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Title
Controllable material removal behavior of 6H-SiC wafer in nanoscale polishing
Authors
Keywords
Interaction mechanism, 6H-SiC wafer, Nanoscale polishing, Cutting depth, Molecular dynamics
Journal
APPLIED SURFACE SCIENCE
Volume 562, Issue -, Pages 150219
Publisher
Elsevier BV
Online
2021-05-27
DOI
10.1016/j.apsusc.2021.150219
References
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