Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 9, Pages 1158-1161Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2016.2594821
Keywords
GaN-on-Si; p-i-n diodes; rectifiers; breakdown ruggedness
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Funding
- Research Grants Council through the Theme-based Research Scheme, Hong Kong Special Administrative Region Government [T23-612/12-R]
- National Natural Science Foundation of China [51507131]
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This letter reports the breakdown ruggedness of GaN-based quasi-vertical p-i-n diodes on Si for the first time. With a 2-mu m-thick drift layer, the 0.08-mm(2) devices can sustain a surge current up to 0.73 A, and maximum sink in energy of 3 mJ using an unclamped inductive switching test setup. No parametric drift nor device degradation was found after repetitive avalanche test consisting of multiple 50 000 breakdown events with a frequency of 1 kHz. At elevated temperatures, the breakdown voltage exhibits little temperature dependence, which could be explained by a trap-assisted space-charge-limited current conduction mechanism. With good ruggedness quality under repetitive test and at elevated temperatures, the quasivertical GaN p-i-n diodes on Si show great potential in achieving cost-effective rectifiers for high-voltage applications.
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