Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 1, Pages 16-19Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2497252
Keywords
Leakage current; non-alloyed and alloyed ohmic contact; regrown contact; trap; GaN on Si; HEMT
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Without employing gate dielectrics, AlGaN/GaN high-electron mobility transistors (HEMTs) on Si with non-alloyed regrown ohmic contacts exhibit record-low leakage currents similar to 10(-12) A/mm, high ON/OFF current ratios >10(11). Compared with HEMTs with conventional alloyed ohmic contacts, HEMTs with non-alloyed contacts show a reduction of 10(6) in leakage current, a steeper subthreshold slope, and >50% improvement in breakdown voltage. These observations indicate that avoiding high-temperature alloyed ohmic processes can lead to improved device performance.
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