Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors With a Tandem Structure for High-Mobility and Reliable Operations

Published 2016 View Full Article

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Title
Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors With a Tandem Structure for High-Mobility and Reliable Operations
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 5, Pages 607-610
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2016-03-30
DOI
10.1109/led.2016.2548020

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