A Separate Extraction Method for Asymmetric Source and Drain Resistances Using Frequency-Dispersive C-V Characteristics in Exfoliated MoS2FET

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Title
A Separate Extraction Method for Asymmetric Source and Drain Resistances Using Frequency-Dispersive C-V Characteristics in Exfoliated MoS2FET
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 2, Pages 231-233
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2016-01-09
DOI
10.1109/led.2015.2509473

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