Influence of GaN/ZrO2 interfacial layer defects on 8-nm GaN-SOI-FinFET for reliable RFIC design

Numerical assessment of high-k spacer on symmetric S/D underlap GAA junctionless accumulation mode silicon nanowire MOSFET for RFIC design

(2021) Neha Gupta et al.   Applied Physics A

20 nm GAA-GaN/Al2O3 nanowire MOSFET for improved analog/linearity performance metrics and suppressed distortion

(2021) Neha Gupta et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Impact of oxide gate electrode for ferroelectric field-effect transistors with metal-ferroelectric-metal-insulator-semiconductor gate stack using undoped HfO2 thin films prepared by atomic layer deposition

(2020) Se-Na Choi et al.   NANOTECHNOLOGY

Improving the electrical characteristics of nanoscale triple-gate junctionless FinFET using gate oxide engineering

(2019) Nazanin Baghban Bousari et al.   AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS

A Nanoscale‐Modified band energy junctionless transistor with considerable progress on the electrical and frequency issue

(2019) Mohammad K. Anvarifard et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Proper Electrostatic Modulation of Electric Field in a Reliable Nano-SOI With a Developed Channel

(2018) Mohammad Kazem Anvarifard et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reliability Issues of In2O5Sn Gate Electrode Recessed Channel MOSFET: Impact of Interface Trap Charges and Temperature

(2018) Ajay Kumar et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Radiation Analysis of N-Channel TGRC-MOSFET: An X-Ray Dosimeter

(2018) Ajay Kumar et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Multi-Gate FinFET Mixer Variability Assessment Through Physics-Based Simulation

(2017) A. M. Bughio et al.   IEEE ELECTRON DEVICE LETTERS

Investigation of parasitic capacitances of In2O5Sn gate electrode recessed channel MOSFET for ULSI switching applications

(2017) Ajay Kumar et al.   MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS

Effect of trench depth and gate length shrinking assessment on the analog and linearity performance of TGRC-MOSFET

(2017) Ajay Kumar   SUPERLATTICES AND MICROSTRUCTURES

Investigation of temperature variations on analog/RF and linearity performance of stacked gate GEWE-SiNW MOSFET for improved device reliability

(2016) N. Gupta et al.   MICROELECTRONICS RELIABILITY

Optimization of high-k and gate metal workfunction for improved analog and intermodulation performance of Gate Stack (GS)-GEWE-SiNW MOSFET

(2016) Neha Gupta et al.   SUPERLATTICES AND MICROSTRUCTURES

Realizing Efficient Volume Depletion in SOI Junctionless FETs

(2016) Shubham Sahay et al.   IEEE Journal of the Electron Devices Society

Band alignment between GaN and ZrO2 formed by atomic layer deposition

(2014) Gang Ye et al.   APPLIED PHYSICS LETTERS

Heterojunction-Free GaN Nanochannel FinFETs With High Performance

(2013) Ki-Sik Im et al.   IEEE ELECTRON DEVICE LETTERS

A Compact Model for Threshold Voltage of Surrounding-Gate MOSFETs With Localized Interface Trapped Charges

(2011) Te-Kuang Chiang   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analytical Modeling of a Nanogap-Embedded FET for Application as a Biosensor

(2010) Ji-Min Choi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-kOrganic, Inorganic, and Hybrid Dielectrics for Low-Voltage Organic Field-Effect Transistors

(2009) Rocío Ponce Ortiz et al.   CHEMICAL REVIEWS

Improving bulk FinFET DC performance in comparison to SOI FinFET

(2009) Mirko Poljak et al.   MICROELECTRONIC ENGINEERING