Full configuration interaction simulations of exchange-coupled donors in silicon using multi-valley effective mass theory

Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device

(2021) Mateusz T. Ma̧dzik et al.   Nature Communications

Valley interference and spin exchange at the atomic scale in silicon

(2020) B. Voisin et al.   Nature Communications

A two-qubit gate between phosphorus donor electrons in silicon

(2019) Y. He et al.   NATURE

Coherent coupling between a quantum dot and a donor in silicon

(2017) Patrick Harvey-Collard et al.   Nature Communications

Valley splitting of single-electron Si MOS quantum dots

(2016) John King Gamble et al.   APPLIED PHYSICS LETTERS

Comparison of low frequency charge noise in identically patterned Si/SiO2 and Si/SiGe quantum dots

(2016) Blake M. Freeman et al.   APPLIED PHYSICS LETTERS

Optimization of a solid-state electron spin qubit using gate set tomography

(2016) Juan P Dehollain et al.   NEW JOURNAL OF PHYSICS

Theory of one and two donors in silicon

(2015) A L Saraiva et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking

(2015) J T Muhonen et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Multivalley effective mass theory simulation of donors in silicon

(2015) John King Gamble et al.   PHYSICAL REVIEW B

Electronic states and wavefunctions of diatomic donor molecular ions in silicon: multi-valley envelope function theory

(2014) M V Klymenko et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

An Exchange-Coupled Donor Molecule in Silicon

(2014) M. F. Gonzalez-Zalba et al.   NANO LETTERS

Storing quantum information for 30 seconds in a nanoelectronic device

(2014) Juha T. Muhonen et al.   Nature Nanotechnology

Hyperfine Stark effect of shallow donors in silicon

(2014) Giuseppe Pica et al.   PHYSICAL REVIEW B

Exchange coupling between silicon donors: The crucial role of the central cell and mass anisotropy

(2014) G. Pica et al.   PHYSICAL REVIEW B

Single-Shot Readout and Relaxation of Singlet and Triplet States in Exchange-CoupledP31Electron Spins in Silicon

(2014) Juan P. Dehollain et al.   PHYSICAL REVIEW LETTERS

Robust Two-Qubit Gates for Donors in Silicon Controlled by Hyperfine Interactions

(2014) Rachpon Kalra et al.   Physical Review X

Charge Noise Spectroscopy Using Coherent Exchange Oscillations in a Singlet-Triplet Qubit

(2013) O. E. Dial et al.   PHYSICAL REVIEW LETTERS

A single-atom electron spin qubit in silicon

(2012) Jarryd J. Pla et al.   NATURE

A single-atom transistor

(2012) Martin Fuechsle et al.   Nature Nanotechnology

Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO2interface

(2012) A. Baena et al.   PHYSICAL REVIEW B

An improved effective-mass-theory equation for phosphorus doped in silicon

(2012) H.T. Hui   SOLID STATE COMMUNICATIONS

Intervalley coupling for interface-bound electrons in silicon: An effective mass study

(2011) A. L. Saraiva et al.   PHYSICAL REVIEW B

Single-shot readout of an electron spin in silicon

(2010) Andrea Morello et al.   NATURE

Quantum control and manipulation of donor electrons in Si-based quantum computing

(2009) M. J. Calderón et al.   JOURNAL OF APPLIED PHYSICS