4.7 Article

Electromagnetic wave-transparent porous silicon nitride ceramic prepared by gel-casting combined with in-situ nitridation reaction

Journal

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
Volume 41, Issue 15, Pages 7620-7629

Publisher

ELSEVIER SCI LTD
DOI: 10.1016/j.jeurceramsoc.2021.08.047

Keywords

Porous silicon nitride ceramics; Reaction bonded silicon nitride; Gel-casting; Dielectric properties

Funding

  1. National Natural Science Foundation of China [52072304, 51632007, 51872229]
  2. 111 Project of China [B08040]
  3. National Science and Technology Major Project [2017-VI-0007-0077]

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In this study, a specific microstructure of porous silicon nitride was achieved through liquid-phase sintering and in-situ nitridation of Si. A novel formulation was developed to produce chemically-stable slurry, and key structural parameters were adjusted to enhance the performance of the ceramics.
To achieve the balance between mechanical properties and electromagnetic wave-transparent properties of porous silicon nitride (Si3N4), the key is to form an interlocking microstructure constituted by columnar beta-Si3N4 crystals. This structure can be realized by liquid-phase sintering. However, grain boundaries which affect high temperature properties and volume shrinkage during sintering are inevitable. We proposed a strategy to realize this structure by gel-casting of beta-Si3N4 whisker (Si3N4w) and Si powder followed by in-situ nitridation of Si. To achieve chemically-stable slurry containing micro-sized Si with low viscosity, a novel formulation was developed. Two key structural parameters of the interlocking Si3N4w network, i.e., density of the Si3N4w skeleton and inter-whisker bonding mode, were adjusted by composition of raw materials and nitridation temperature. The flexural strength, dielectric constant and loss of the porous ceramics are 44.9 MPa, 2.7 and 2 x 10(-3), when the volume fraction of Si3N4w/Si is 5 and the nitriding temperature is 1400 degrees C.

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