Tuning Schottky Barrier and Contact Type of Metal–Semiconductor in Ti3C2T2/MoS2 (T = F, O, OH) by Strain: A First-Principles Study
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Title
Tuning Schottky Barrier and Contact Type of Metal–Semiconductor in Ti3C2T2/MoS2 (T = F, O, OH) by Strain: A First-Principles Study
Authors
Keywords
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Journal
Journal of Physical Chemistry C
Volume 125, Issue 29, Pages 16200-16210
Publisher
American Chemical Society (ACS)
Online
2021-07-20
DOI
10.1021/acs.jpcc.1c03286
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