A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer

Published 2021 View Full Article

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Title
A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 68, Issue 6, Pages 2796-2803
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2021-05-06
DOI
10.1109/ted.2021.3073650

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