A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer

标题
A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 68, Issue 6, Pages 2796-2803
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2021-05-06
DOI
10.1109/ted.2021.3073650

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