AlGaN/GaN Enhancement-Mode MOSHEMTs Utilizing Hybrid Gate-Recessed Structure and Ferroelectric Charge Trapping/Storage Stacked LiNbO3/HfO2/Al2O3 Structure

标题
AlGaN/GaN Enhancement-Mode MOSHEMTs Utilizing Hybrid Gate-Recessed Structure and Ferroelectric Charge Trapping/Storage Stacked LiNbO3/HfO2/Al2O3 Structure
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 68, Issue 8, Pages 3768-3774
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2021-06-29
DOI
10.1109/ted.2021.3090343

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