Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor

Published 2021 View Full Article

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Title
Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 9, Pages 1280-1283
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2021-08-06
DOI
10.1109/led.2021.3102592

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