4.2 Article

Ferroelectric thin film on a silicon-based pn junction: Coupling photovoltaic properties

Journal

FERROELECTRICS
Volume 500, Issue 1, Pages 250-258

Publisher

TAYLOR & FRANCIS LTD
DOI: 10.1080/00150193.2016.1229532

Keywords

Ferroelectrics; pn junction; photovoltaic properties; coupling

Funding

  1. scientific research foundation of Mianyang Normal University [QD2013A07]
  2. Open Project of State Key Laboratory Cultivation Base for Nonmetal Composites
  3. Open Project of State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials (Southwest University of Science and Technology), China [12zxfk15]

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PbTiO3 (PTO) thin film was deposited on a Si-based pn-junction to form a ferroelectric-pn junction structure (PTO/pn cell). It exhibits a coupling photovoltaic property. V-oc of the PTO/pn cell is approximately equal to V-oc summation of single pn-junction structure (pn cell) and single PTO films (PTO cell). I-sc and internal quantum efficiency of the PTO/pn cell are much higher than that of the PTO cell. Photovoltaic properties of the PTO/pn cell can be tuned by controlling the direction of the polarization voltage applied on the cell. Reasons for the tuning and enhanced photovoltaic properties are analyzed.

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