Journal
NANOTECHNOLOGY
Volume 32, Issue 38, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/ac0933
Keywords
ultraviolet photodetector; Al (x) Ga1-x N nanowire arrays; pn junction; gradient component
Funding
- National Natural Science Foundation of China [11774171, 11874220, 11974182, 21805137]
- Fundamental Research Funds for the Central Universities [NT2020019]
- Open Fund of Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education [INMD-2020M03]
- Nanjing University of Aeronautics Astronautics [1008-YAH21077]
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The study proposed a self-powered photodetector based on Al (x) Ga1-x N nanowire arrays, and demonstrated the advantages of the coupling structure through theoretical models and simulations. This research provides a reliable method for designing photodetectors with micro-nano structures.
Ultraviolet photodetector has a variety of applications in medical diagnosis, civilian testing and military security. The enhancement of photo response has far been a hot topic regrading to the performance improvement of the devices. In this study, we proposed a self-powered photodetector based on Al (x) Ga1-x N nanowire arrays (NWAs) utilizing axial pn junction integrating with gradient Al component. The merit of the coupling structure is demonstrated by theoretical model and simulations. The photoelectric conversion model is built based on a continuity equation derived by its corresponding boundary conditions. The photocurrent for a single nanowire and NWAs are respectively obtained. According to the simulation results of a single nanowire, the optimal nanowire height is obtained with a photocurrent enhancement up to 330%. For NWAs, the aspect ratio of NWAs and incident angle of light synergistically determine the output photocurrent. The optimal aspect ratio for NWAs is 1:1 with an optimal incident angle of 57 degrees. This study provides a reliable method for the design of photodetectors with micro-nano structures.
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