Stability and electronic properties of hybrid coaxial carbon nanotubes-boron nitride nanotubes under the influence of electric field

We investigated the electronic properties of coaxial carbon nanotube-boron nitride nanotube hybrid system under the influence of external electric field. Although the clear discrepancy in the electronic properties between the configurations used in this study, we found that the electronic properties of both hybrid configurations show almost the same as the electronic states near the band edges of carbon nanotube. We also found that the interaction force between the outer boron nitride nanotube and inner carbon nanotube is repulsive force, whereas the interaction force between the outer carbon nanotube and inner boron nitride nanotube is attractive force. Furthermore, applying external electric field gradually modifies the band gap and a semiconductor-metal transition achieved. In addition, the redistributed charges are more localized in the certain atoms in outer carbon nanotube and inner boron nitride nanotube coaxial structure. Moreover, different combinations between carbon nanotube and boron nitride nanotube might lead to new materials with tunable electronic properties.

Automated summary

The electronic properties of coaxial carbon nanotube-boron nitride nanotube hybrid system were investigated under the influence of an external electric field. Despite discrepancies in electronic properties between the configurations used, both hybrid configurations showed similar electronic states near the band edges of carbon nanotubes. The application of an external electric field gradually changed the band gap and induced a semiconductor-metal transition, with redistributed charges more localized in certain atoms in the coaxial structure. Different combinations between carbon nanotubes and boron nitride nanotubes may lead to new materials with tunable electronic properties.