4.8 Article

Dendritic CsSnI3 for Efficient and Flexible Near-Infrared Perovskite Light-Emitting Diodes

Journal

ADVANCED MATERIALS
Volume 33, Issue 44, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202104414

Keywords

perovskites; light-emitting diodes; lead-free perovskites; near-infrared emission; all-inorganic perovskites

Funding

  1. National Natural Science Foundation of China [51802102, 21805101, 51902110]
  2. Natural Science Foundation of Fujian Province [2020J06021, 2019J01057, 2020J01064]
  3. Scientific Research Funds of Huaqiao University [17BS409, 19BS105, ZQN-PY607]
  4. subsidized Project for Postgraduate's Innovative Fund in Scientific Research of Huaqiao University

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This paper proposes managing charge injection and recombination behavior in CsSnI3-based Pero-LEDs by tuning the interface area of perovskite and charge-transporter. By utilizing a dendritic CsSnI3 structure, efficient lead-free NIR Pero-LEDs are achieved with a record external quantum efficiency of 5.4%. The dendritic structure also shows superiorities in flexible devices, maintaining almost no morphology change even after 2000 cycles of bends, and retaining 93.4% of initial EQEs after 50 cycles of bends.
All-inorganic and lead-free CsSnI3 is emerging as one of the most promising candidates for near-infrared perovskite light-emitting diodes (NIR Pero-LEDs), which find practical applications including facial recognition, biomedical apparatus, night vision camera, and Light Fidelity. However, in the CsSnI3-based Pero-LEDs, the holes injection is significantly higher than that of electrons, resulting in unbalanced charge injection, undesired exciton dissipation, and poor device performance. Herein, it is proposed to manage charge injection and recombination behavior by tuning the interface area of perovskite and charge-transporter. A dendritic CsSnI3 structure is prepared on the hole-transporter, only making a bottom contact with the hole-transporter and exposing all other available crystal surfaces to the electron-transporter. In other words, the interface area of perovskite/electron-transporter is significantly higher than that of perovskite/hole-transporter. Moreover, the embedding interface of perovskite/electron-transporter can spatially confine holes and electrons, increasing the radiation recombination. By taking advantage of the dendritic structure, efficient lead-free NIR Pero-LEDs are achieved with a record external quantum efficiency (EQE) of 5.4%. More importantly, the dendritic structure shows great superiorities in flexible devices, for there is almost no morphology change after 2000-cycles of bends, and the fabricated Pero-LEDs can keep 93.4% of initial EQEs after 50-cycles of bends.

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