Journal
ADVANCED MATERIALS
Volume 34, Issue 18, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202109785
Keywords
near-infrared emission; perovskites; quantum dots; quantum-dot light-emitting diodes
Categories
Funding
- Ministry of Science and Technology, Taiwan [MOST 110-2221-E-131-028, 109-2223-E-131-001-MY3, 110-2113-M-002-008-MY3]
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In recent years, the performance and efficiency of perovskite quantum dots and QD-based light-emitting diodes have greatly improved, but the development of near-infrared QLEDs lags behind. In this study, new near-infrared-emissive perovskite quantum dots were developed through post-treatment, achieving high photoluminescence quantum yield and preparing high-quality films suitable for highly efficient near-infrared QLED applications.
In recent years, the performance of perovskite quantum dots (QDs) and QD-based light-emitting diodes (QLEDs) has improved greatly, with electroluminescence (EL) efficiency of green and red emission exceeding 20%. However, the development of perovskite near-infrared (NIR) QLEDs has reached stagnation, where the reported maximum EL efficiency is still below 6%, limiting their further applications. In this work, new NIR-emissive FAPbI(3) QDs are developed by post-treating long alkyl-encapsulated QDs with 2-phenylethylammonium iodide (PEAI). The incorporation of PEAI reduces the QD surface defects for giving a high photoluminescence quantum yield up to 61.6%. The n-octane solution of PEAI-passivated FAPbI(3) QDs is spin coated on top of the PEDOT:PSS-treated ITO electrode modified with a thermally crosslinked hole-transporting layer to give a full-coverage, smooth, and dense QD film. Incorporating with an effective electron-transporting material, CN-T2T, which has deep lowest unoccupied molecular orbital and good electron mobility, the optimal device with EL lambda(max) at 772 nm achieves an external quantum efficiency up to 15.4% at a current density of 0.54 mA cm(-2) (2.6 V), which is the highest efficiency ever reported for perovskite-based NIR QLEDs. This study provides a facile strategy to prepare high-quality perovskite QD films suitable for highly efficient NIR QLED applications.
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