Optimization of Oxygen Plasma Treatment on Ohmic Contact for AlGaN/GaN HEMTs on High-Resistivity Si Substrate

Analysis of reverse leakage mechanism in recess-free thin-barrier AlGaN/GaN Schottky barrier diode

(2021) Hao Wu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Effects of Al Composition and High-Temperature Atomic Layer-Deposited Al2O3 Layer on the Leakage Current Characteristics of AlGaN/GaN Schottky Barrier Diodes

(2021) Jae-Hoon Lee et al.   Crystals

Optimization of Ohmic Contact for AlGaN/GaN HEMT on Low-Resistivity Silicon

(2020) Bhavana Benakaprasad et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Fabrication and Performance of Ti/Al/Ni/TiN Au-Free Ohmic Contacts for Undoped AlGaN/GaN HEMT

(2020) Xianhui Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using oxygen plasma treatment

(2019) Chi Sun et al.   Applied Physics Express

Ultra-Low Contact Resistivity of < $0.1~\Omega\cdot$ mm for Au-Free TixAly Alloy Contact on Non-Recessed i-AlGaN/GaN

(2019) Meng-Ya Fan et al.   IEEE ELECTRON DEVICE LETTERS

Effect of γ-ray irradiation on Schottky and ohmic contacts on AlGaN/GaN hetero-structures

(2019) Chandan Sharma et al.   MICROELECTRONICS RELIABILITY

Ultralow-Contact-Resistance Au-Free Ohmic Contacts With Low Annealing Temperature on AlGaN/GaN Heterostructures

(2018) Jinhan Zhang et al.   IEEE ELECTRON DEVICE LETTERS

High RF Performance AlGaN/GaN HEMT Fabricated by Recess-Arrayed Ohmic Contact Technology

(2018) Yang Lu et al.   IEEE ELECTRON DEVICE LETTERS

Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs

(2018) Liang Song et al.   AIP Advances

Ohmic contacts to Gallium Nitride materials

(2016) Giuseppe Greco et al.   APPLIED SURFACE SCIENCE

Ultralow-Leakage AlGaN/GaN High Electron Mobility Transistors on Si With Non-Alloyed Regrown Ohmic Contacts

(2016) Bo Song et al.   IEEE ELECTRON DEVICE LETTERS

Yellow luminescence band in undoped GaN revealed by two-wavelength excited photoluminescence

(2016) M. Julkarnain et al.   OPTICAL MATERIALS

Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing

(2015) Jinhan Zhang et al.   APPLIED PHYSICS LETTERS

Low ohmic-contact resistance in AlGaN/GaN high electron mobility transistors with holes etching in ohmic region

(2015) Chong Wang et al.   ELECTRONICS LETTERS

Low-Temperature Ohmic Contact Formation in GaN High Electron Mobility Transistors Using Microwave Annealing

(2015) Lin-Qing Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Nanoscale electrical and structural modification induced by rapid thermal oxidation of AlGaN/GaN heterostructures

(2013) Giuseppe Greco et al.   NANOTECHNOLOGY

Formation of Ohmic contacts in AlGaN/GaN HEMT structures at 500°C by Ohmic contact recess etching

(2009) W.S. Lau et al.   MICROELECTRONICS RELIABILITY

Effects of Si Deposition on AlGaN Barrier Surfaces in GaN Heterostructure Field-Effect Transistors

(2008) Norio Onojima et al.   Applied Physics Express