4.8 Article

Modeling and Reduction of Radiated EMI in a GaN IC-Based Active Clamp Flyback Adapter

Journal

IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume 36, Issue 5, Pages 5440-5449

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2020.3032644

Keywords

Electromagnetic interference; Power cables; Couplings; Impedance; Gallium nitride; Antennas; Windings; Active clamp; capacitive coupling; flyback converter; gallium nitride (GaN) device; radiated electromagnetic interference (EMI)

Funding

  1. Navitas Semiconductor Inc.

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This article develops a radiated electromagnetic interference (EMI) model for a gallium nitride (GaN) integrated circuit (IC)-based active clamp flyback converter. Important capacitive couplings are identified, extracted, and validated to improve the radiated EMI model. Techniques to reduce capacitive couplings and the radiated EMI are proposed and experimentally validated based on the improved model.
This article first develops a radiated electromagnetic interference (EMI) model for a gallium nitride (GaN) integrated circuit (IC)-based active clamp flyback converter. Important capacitive couplings, which play a big role in the radiated EMI, are identified, extracted, and validated in the converter. The radiated EMI model is improved to characterize the impact of capacitive couplings. Based on the improved model, techniques to reduce capacitive couplings and the radiated EMI are proposed and experimentally validated.

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