Investigation of Quantum Confinement Effects on Molybdenum Disulfide (MoS2) Based Transistor Using Ritz Galerkin Finite Element Technique

Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO₂ Dielectric Using Cubic Spline Interpolation Technique

(2020) V. Sandeep et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A physically based compact I–V model for monolayer TMDC channel MOSFET and DMFET biosensor

(2018) Ehsanur Rahman et al.   NANOTECHNOLOGY

Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor

(2017) J. Charles Pravin et al.   SUPERLATTICES AND MICROSTRUCTURES

Effect of temperature & phonon scattering on the drain current of a MOSFET using SL-MoS 2 as its channel material

(2017) Sabyasachi Tiwari et al.   SUPERLATTICES AND MICROSTRUCTURES

Exciton binding energy in bulk MoS2: A reassessment

(2016) Nihit Saigal et al.   APPLIED PHYSICS LETTERS

Investigation of Traps at MoS2/Al2O3Interface in nMOSFETs by Low-Frequency Noise

(2016) Hui-Wen Yuan et al.   IEEE ELECTRON DEVICE LETTERS

A New Drain Current Model for a Dual Metal Junctionless Transistor for Enhanced Digital Circuit Performance

(2016) J. Charles Pravin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications

(2016) J. Charles Pravin et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Quantum confinement effects across two-dimensional planes in MoS2 quantum dots

(2015) Z. X. Gan et al.   APPLIED PHYSICS LETTERS

Electrically Tunable Bandgaps in Bilayer MoS2

(2015) Tao Chu et al.   NANO LETTERS

Numerical modeling of triple material gate stack gate all-around (TMGSGAA) MOSFET considering quantum mechanical effects

(2015) B. Padmanaban et al.   SUPERLATTICES AND MICROSTRUCTURES

A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect

(2014) Wei Cao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

(2014) Wenjuan Zhu et al.   Nature Communications

Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

(2014) Rui Cheng et al.   Nature Communications

Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors

(2014) Jian-Chiun Liou et al.   Nanoscale Research Letters

Quantum confinement in Si and Ge nanostructures: Theory and experiment

(2014) Eric G. Barbagiovanni et al.   Applied Physics Reviews

Device Performance of Heterojunction Tunneling Field-Effect Transistors Based on Transition Metal Dichalcogenide Monolayer

(2013) Kai-Tak Lam et al.   IEEE ELECTRON DEVICE LETTERS

Effect of spin-orbit interaction on the optical spectra of single-layer, double-layer, and bulk MoS2

(2013) Alejandro Molina-Sánchez et al.   PHYSICAL REVIEW B

Relation between Poisson and Schrödinger equations

(2012) Gabriel González   AMERICAN JOURNAL OF PHYSICS

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

(2012) Won Seok Yun et al.   PHYSICAL REVIEW B

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Compact model of short-channel MOSFETs considering quantum mechanical effects

(2009) G.S. Jayadeva et al.   SOLID-STATE ELECTRONICS