Intrinsic memristive mechanisms in 2D layered materials for high-performance memory

Temperature- and thickness-dependence of robust out-of-plane ferroelectricity in CVD grown ultrathin van der Waals α-In2Se3 layers

(2020) Weng Fu Io et al.   Nano Research

Neuromorphic nanoelectronic materials

(2020) Vinod K. Sangwan et al.   Nature Nanotechnology

High‐Electric‐Field‐Induced Phase Transition and Electrical Breakdown of MoTe 2

(2020) Changsik Kim et al.   Advanced Electronic Materials

Resistive switching materials for information processing

(2020) Zhongrui Wang et al.   Nature Reviews Materials

Phase Engineering of Two‐Dimensional Transition Metal Dichalcogenides

(2020) Ziyue Qian et al.   CHINESE JOURNAL OF CHEMISTRY

Purely in-plane ferroelectricity in monolayer SnS at room temperature

(2020) Naoki Higashitarumizu et al.   Nature Communications

In-Plane Ferroelectric Tin Monosulfide and Its Application in a Ferroelectric Analog Synaptic Device

(2020) Ki Chang Kwon et al.   ACS Nano

Electronics based on two-dimensional materials: Status and outlook

(2020) Senfeng Zeng et al.   Nano Research

Berry curvature memory through electrically driven stacking transitions

(2020) Jun Xiao et al.   Nature Physics

Vertical MoS2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV

(2019) Renjing Xu et al.   NANO LETTERS

Vacancy‐Induced Synaptic Behavior in 2D WS 2 Nanosheet–Based Memristor for Low‐Power Neuromorphic Computing

(2019) Xiaobing Yan et al.   Small

Room-temperature ferroelectricity in MoTe2 down to the atomic monolayer limit

(2019) Shuoguo Yuan et al.   Nature Communications

Study of in Situ Silver Migration in Amorphous Boron Nitride CBRAM Device

(2019) Yu-Rim Jeon et al.   ACS Applied Materials & Interfaces

Gate‐Tunable and Multidirection‐Switchable Memristive Phenomena in a Van Der Waals Ferroelectric

(2019) Fei Xue et al.   ADVANCED MATERIALS

Room-temperature out-of-plane and in-plane ferroelectricity of two-dimensional β-InSe nanoflakes

(2019) Haowen Hu et al.   APPLIED PHYSICS LETTERS

A room-temperature ferroelectric semimetal

(2019) Pankaj Sharma et al.   Science Advances

Recent Advances in Transistor‐Based Artificial Synapses

(2019) Shilei Dai et al.   ADVANCED FUNCTIONAL MATERIALS

Van der Waals Heterostructures for High‐Performance Device Applications: Challenges and Opportunities

(2019) Shi‐Jun Liang et al.   ADVANCED MATERIALS

Origin of robust out-of-plane ferroelectricity in d1T-MoS2 monolayer

(2019) Ji-Hae Choi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Tunable quadruple-well ferroelectric van der Waals crystals

(2019) John A. Brehm et al.   NATURE MATERIALS

The emerging ferroic orderings in two dimensions

(2019) Yupeng Zhang et al.   Science China-Information Sciences

The rise of 2D dielectrics/ferroelectrics

(2019) Minoru Osada et al.   APL Materials

Mechanically Tunable Spontaneous Vertical Charge Redistribution in Few-Layer WTe2

(2019) Zeyuan Ni et al.   Journal of Physical Chemistry C

The coexistence of ferroelectricity and topological phase transition in monolayer α-In2Se3 under strain engineering

(2019) Xingxing Jiang et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure

(2018) Mengwei Si et al.   ACS Nano

Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics

(2018) Jiadi Zhu et al.   ADVANCED MATERIALS

Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3

(2018) Chaojie Cui et al.   NANO LETTERS

Room-Temperature Ferroelectricity and Switchable Diode Effect in Two-Dimensional α-In2Se3 Thin Layers

(2018) Siyuan Wan et al.   Nanoscale

Intrinsic Two-Dimensional Ferroelectricity with Dipole Locking

(2018) Jun Xiao et al.   PHYSICAL REVIEW LETTERS

Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films

(2018) A. Ranjan et al.   Scientific Reports

Reversible alternation between bipolar and unipolar resistive switching in Ag/MoS2/Au structure for multilevel flexible memory

(2018) Xiaoning Zhao et al.   Journal of Materials Chemistry C

Ultralow power artificial synapses using nanotextured magnetic Josephson junctions

(2018) Michael L. Schneider et al.   Science Advances

MoS2 Memristors Exhibiting Variable Switching Characteristics toward Biorealistic Synaptic Emulation

(2018) Da Li et al.   ACS Nano

Artificial synapses based on nanomaterials

(2018) Yihang Chen et al.   NANOTECHNOLOGY

A library of atomically thin metal chalcogenides

(2018) Jiadong Zhou et al.   NATURE

Ferroelectric switching of a two-dimensional metal

(2018) Zaiyao Fei et al.   NATURE

Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide

(2018) Vinod K. Sangwan et al.   NATURE

Room‐Temperature Ferroelectricity in Hexagonally Layered α‐In 2 Se 3 Nanoflakes down to the Monolayer Limit

(2018) Fei Xue et al.   ADVANCED FUNCTIONAL MATERIALS

Origin of Two-Dimensional Vertical Ferroelectricity in WTe2 Bilayer and Multilayer

(2018) Qing Yang et al.   Journal of Physical Chemistry Letters

Electric-field induced structural transition in vertical MoTe2- and Mo1–xWxTe2-based resistive memories

(2018) Feng Zhang et al.   NATURE MATERIALS

Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing

(2018) Xiaojian Zhu et al.   NATURE MATERIALS

Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides

(2017) Ruijing Ge et al.   NANO LETTERS

Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nanoflakes

(2017) Yu Zhou et al.   NANO LETTERS

Phase evolution of lithium intercalation dynamics in 2H-MoS2

(2017) Juan Xia et al.   Nanoscale

Structural phase transition in monolayer MoTe2 driven by electrostatic doping

(2017) Ying Wang et al.   NATURE

Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials

(2017) Wenjun Ding et al.   Nature Communications

Possible absence of critical thickness and size effect in ultrathin perovskite ferroelectric films

(2017) Peng Gao et al.   Nature Communications

Two dimensional hexagonal boron nitride (2D-hBN): synthesis, properties and applications

(2017) Kailiang Zhang et al.   Journal of Materials Chemistry C

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

(2017) Chuanhui Gong et al.   Advanced Science

Hexagonal Boron Nitride Thin Film for Flexible Resistive Memory Applications

(2016) Kai Qian et al.   ADVANCED FUNCTIONAL MATERIALS

Recent Developments in Graphene-Based Membranes: Structure, Mass-Transport Mechanism and Potential Applications

(2016) Pengzhan Sun et al.   ADVANCED MATERIALS

Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory

(2016) Sen Liu et al.   ADVANCED MATERIALS

Interaction of Black Phosphorus with Oxygen and Water

(2016) Yuan Huang et al.   CHEMISTRY OF MATERIALS

Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations

(2016) Xia Hong   JOURNAL OF PHYSICS-CONDENSED MATTER

Intrinsic Ferroelasticity and/or Multiferroicity in Two-Dimensional Phosphorene and Phosphorene Analogues

(2016) Menghao Wu et al.   NANO LETTERS

Switchable polarization in an unzipped graphene oxide monolayer

(2016) Mohammad Noor-A-Alam et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Discovery of robust in-plane ferroelectricity in atomic-thick SnTe

(2016) Kai Chang et al.   SCIENCE

Environmental Instability and Degradation of Single- and Few-Layer WTe2Nanosheets in Ambient Conditions

(2016) Fan Ye et al.   Small

Atomic mechanism of polarization-controlled surface reconstruction in ferroelectric thin films

(2016) Peng Gao et al.   Nature Communications

Structural semiconductor-to-semimetal phase transition in two-dimensional materials induced by electrostatic gating

(2016) Yao Li et al.   Nature Communications

Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes

(2016) Fucai Liu et al.   Nature Communications

Thickness-dependent bandgap tunable molybdenum disulfide films for optoelectronics

(2016) Juntong Zhu et al.   RSC Advances

Thin-film ferroelectric materials and their applications

(2016) Lane W. Martin et al.   Nature Reviews Materials

Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids

(2015) Saptarshi Das et al.   Annual Review of Materials Research

Charge Mediated Semiconducting-to-Metallic Phase Transition in Molybdenum Disulfide Monolayer and Hydrogen Evolution Reaction in New 1T′ Phase

(2015) Guoping Gao et al.   Journal of Physical Chemistry C

CuInP2S6 Room Temperature Layered Ferroelectric

(2015) A. Belianinov et al.   NANO LETTERS

Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2

(2015) Vinod K. Sangwan et al.   Nature Nanotechnology

Metallic 1T phase MoS2 nanosheets as supercapacitor electrode materials

(2015) Muharrem Acerce et al.   Nature Nanotechnology

Bandgap opening in few-layered monoclinic MoTe 2

(2015) Dong Hoon Keum et al.   Nature Physics

Graphene, related two-dimensional crystals, and hybrid systems for energy conversion and storage

(2015) F. Bonaccorso et al.   SCIENCE

Phase patterning for ohmic homojunction contact in MoTe2

(2015) S. Cho et al.   SCIENCE

Emergence of room-temperature ferroelectricity at reduced dimensions

(2015) D. Lee et al.   SCIENCE

Graphene and Graphene-like Two-Dimensional Materials in Photodetection: Mechanisms and Methodology

(2014) Zhenhua Sun et al.   ACS Nano

Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure

(2014) Meiyun Zhang et al.   APPLIED PHYSICS LETTERS

Electronics based on two-dimensional materials

(2014) Gianluca Fiori et al.   Nature Nanotechnology

Emergence of Ferroelectricity at a Metal-Semiconductor Transition in a1TMonolayer ofMoS2

(2014) Sharmila N. Shirodkar et al.   PHYSICAL REVIEW LETTERS

Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers

(2014) Karel-Alexander N. Duerloo et al.   Nature Communications

Ferroelectric tunnel junctions for information storage and processing

(2014) Vincent Garcia et al.   Nature Communications

Overview of emerging nonvolatile memory technologies

(2014) Jagan Meena et al.   Nanoscale Research Letters

Memristor-based neural networks

(2013) Andy Thomas   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Synaptic electronics: materials, devices and applications

(2013) Duygu Kuzum et al.   NANOTECHNOLOGY

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

Ferroelectric Tunnel Memristor

(2012) D. J. Kim et al.   NANO LETTERS

MoS2Nanosheets for Top-Gate Nonvolatile Memory Transistor Channel

(2012) Hee Sung Lee et al.   Small

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Direct observation and quantification of grain boundary shear-migration coupling in polycrystalline Al

(2011) F. Mompiou et al.   JOURNAL OF MATERIALS SCIENCE

Hysteresis of Electronic Transport in Graphene Transistors

(2010) Haomin Wang et al.   ACS Nano

Settling the “Dead Layer” Debate in Nanoscale Capacitors

(2009) Li-Wu Chang et al.   ADVANCED MATERIALS

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications

(2009) Yan Wang et al.   NANOTECHNOLOGY

Impermeable Atomic Membranes from Graphene Sheets

(2008) J. Scott Bunch et al.   NANO LETTERS

Dynamics of grain boundary motion coupled to shear deformation: An analytical model and its verification by molecular dynamics

(2008) V. A. Ivanov et al.   PHYSICAL REVIEW B

Ultrahigh electron mobility in suspended graphene

(2008) K.I. Bolotin et al.   SOLID STATE COMMUNICATIONS