Effects of Process-Induced Defects on Polarization Switching in Ferroelectric Tunneling Junction Memory

Published 2021 View Full Article

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Title
Effects of Process-Induced Defects on Polarization Switching in Ferroelectric Tunneling Junction Memory
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 3, Pages 323-326
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2021-02-25
DOI
10.1109/led.2021.3052306

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