Article
Chemistry, Multidisciplinary
Mei Er Pam, Sifan Li, Tong Su, Yu-Chieh Chien, Yesheng Li, Yee Sin Ang, Kah-Wee Ang
Summary: This study demonstrates a facile approach to transform an inactive rhenium disulfide (ReS2) into an effective switching material through interfacial modulation induced by molybdenum-irradiation (Mo-i) doping. The results show that ReS2 of various thicknesses can be switchable by modulating the Mo-irradiation period. The fabricated device exhibits bipolar non-volatile switching, programmable multilevel resistance states, and long-term synaptic plasticity. Additionally, it achieves a high MNIST learning accuracy of 91% under a non-identical pulse train.
ADVANCED MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Hyun Kyu Seo, Jin Joo Ryu, Su Yeon Lee, Kanghyoek Jeon, Hyunchul Sohn, Gun Hwan Kim, Min Kyu Yang
Summary: Novel computing systems are required to process unstructured data with low power and parallel processing, similar to the functionality of the human brain. Research has focused on resistive switching devices and crossbar arrays to mimic the functioning of the human brain in electronic devices. This study highlights improvements in the reliability characteristics of a self-rectifying resistive switching cell and the importance of asymmetric electrodes and linear conductance update for inference performance.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Chemistry, Physical
Shuxia Ren, Zhenhua Li, Xiaomin Liu, Yongsheng Li, Guozhong Cao, Jinjin Zhao
Summary: Graphene materials have shown significant potential in memristor and spintronic devices. This study investigated the resistive and magnetic switching effects in Ag/graphene quantum dots (GQDs) and graphene oxide (GO)/ITO devices. The results showed that GQDs memristor has higher resistive switching ratios and saturation magnetization compared to GQDs-free memristor, making it a promising candidate for future spintronic devices.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Nanoscience & Nanotechnology
Pu Guo, Junyao Zhang, Dapeng Liu, Ruizhi Wang, Li Li, Li Tian, Jia Huang
Summary: This study develops solution-processed optoelectronic synaptic transistors (OSTs) that can simulate the visual nociceptor perception functions of the peripheral nervous system (PNS) and the memorizing and computing functions of the central nervous system (CNS). The OSTs demonstrate ultraviolet light selectivity and achieve 1000 conductance states, showing their potential for artificial vision and pattern recognition based on neural networks.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Ke Chang, Xinhui Zhao, Xinna Yu, Zhikai Gan, Renzhi Wang, Anhua Dong, Zhuyikang Zhao, Yafei Zhang, Hui Wang
Summary: In this work, a light-triggered nonvolatile resistive switching behavior in oxygen-doped MoS2 is demonstrated. The two-terminal devices exhibit stable light-modulated resistive switching characteristics and optically tunable synaptic properties with an on/off ratio of up to 104. The integrated device with crossbar architecture enables simultaneous image sensing, preprocessing, and storage, thereby increasing the training efficiency and recognition rate of image recognition tasks. This work presents a novel pathway to develop the next generation of light-controlled memory and artificial vision systems for neuromorphic computing.
Article
Chemistry, Physical
Min-Kyu Song, Seok Daniel Namgung, Hojung Lee, Jeong Hyun Yoon, Young-Woong Song, Kang Hee Cho, Yoon-Sik Lee, Jong-Seok Lee, Ki Tae Nam, Jang-Yeon Kwon
Summary: This study investigates the gradual switching phenomenon in peptide-based memristors under high proton conductivity. The unexpected high slope value in the log/-V curve at low voltage leads to significantly increased accuracy of image recognition.
Article
Chemistry, Multidisciplinary
Sergei Koveshnikov, Oleg Kononenko, Oleg Soltanovich, Olesya Kapitanova, Maxim Knyazev, Vladimir Volkov, Eugene Yakimov
Summary: Graphene oxide, among various graphene derivatives, is the most studied material due to its reliable and repeatable resistive switching properties. Researchers have identified three operative mechanisms responsible for this resistive switching, including metallic-like filamentary conduction, contact resistance modification, and oxidation/reduction in the bulk of graphene oxide.
Article
Chemistry, Multidisciplinary
Yong Huang, Jiahao Yu, Yu Kong, Xiaoqiu Wang
Summary: This study successfully imitated various synaptic functions and observed the transition from synaptic behaviors to bipolar resistive switching behaviors using memristors. The experimental results demonstrate that the memristor has potential applications in neuromorphic computing and data storage systems.
Article
Materials Science, Multidisciplinary
Zhiliang Chen, Yating Zhang, Yu Yu, Yifan Li, Qingyan Li, Tengteng Li, Hongliang Zhao, Zhongyang Li, Pibin Bing, Jianquan Yao
Summary: This study proposes a competitive RRAM device for simulating neural synapse in the human visual perception system. The device demonstrates competitive resistive memory characteristics and is integrated with a light-sensitive electronic component to construct an artificial visual perception system. Under light irradiation, versatile synaptic functions can be imitated.
MATERIALS & DESIGN
(2022)
Article
Engineering, Electrical & Electronic
Kaushik Mallick, Venkata K. Perla, Sarit K. Ghosh
Summary: In this study, an organic-inorganic hybrid system of nickel sulfide was synthesized and used as a memristor for artificial synapses. The memristor exhibited stable resistive switching behavior and synaptic plasticity, mimicking Hebbian learning.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Multidisciplinary Sciences
Sera Kwon, Min-Jung Kim, Dong-Hyeok Lim, Kwangsik Jeong, Kwun-Bum Chung
Summary: The resistive switching behavior of solution processed SiOx device was improved by inserting TiO2 nanoparticles. The SiOx@TiO2 NPs device showed remarkable switching characteristics including higher SET/RESET ratio, lower operating voltages, improved cycle-to-cycle variability, faster switching speed, and multiple-RESET states. The improved resistive switching was attributed to the difference in formation/rupture of the conductive path and the control of resistance and switching voltage achieved by TiO2 NPs.
SCIENTIFIC REPORTS
(2022)
Review
Chemistry, Multidisciplinary
Emanuel Carlos, Rita Branquinho, Rodrigo Martins, Asal Kiazadeh, Elvira Fortunato
Summary: Metal oxide resistive switching memories are crucial for the requirements of the Internet of Things, and solution-based devices offer advantages such as high flexibility and low cost. These devices are emergent and promising non-volatile memories for future electronics.
ADVANCED MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
Anirudh Kumar, KM. Preeti, Satendra Pal Singh, Sejoon Lee, Ajeet Kaushik, Sanjeev K. Sharma
Summary: Neuromorphic computing systems emulate biological synapses electronically for information handling and processing. Memristors are emerging as crucial components for AI and IoT circuits to develop energy-efficient intelligent systems. This review focuses on n-ZnO:Poly hybrid nanocomposite-based memristors and their resistive switching mechanisms, progress, and challenges. The synaptic functions of these memristors as artificial synapses for neural networks are explored, and the key requirements for AI and IoT electronics are highlighted.
Article
Nanoscience & Nanotechnology
Dani S. Assi, Muhammed P. U. Haris, Vaithinathan Karthikeyan, Samrana Kazim, Shahzada Ahmad, Vellaisamy A. L. Roy
Summary: In the pursuit of reducing energy consumption, there is a growing demand for electronic materials beyond silicon for neuromorphic AI devices. Organohalide perovskites, with their energy efficiency and adaptability, can simulate synaptic functions in the human brain. This study designs and develops CsFAPbI(3)-based memristive neuromorphic devices that can switch at low power and exhibit larger endurance. The results provide a pathway to achieving low-power neuromorphic devices that mimic the performance of the human brain.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Prabana Jetty, Dwipak Prasad Sahu, Suryanarayana Jammalamadaka
Summary: The study demonstrates the analog switching characteristics of bio-RRAM devices based on chitosan and RGO+chitosan, as well as the stability and conduction channel mechanism in these devices. Additionally, synaptic learning rules such as long-term potentiation (LTP) on Ag/RGO+chitosan/FTO-based device were shown, indicating the potential of this synaptic bio-RRAM device in future neuromorphic computing applications.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2022)
Article
Chemistry, Multidisciplinary
Yucheng Yang, Wenya Wei, Peng He, Siwei Yang, Qinghong Yuan, Guqiao Ding, Zhi Liu, Xiaoming Xie
Summary: This paper explores the Raman spectrum properties of C3N and discusses the stacking driven Raman spectra change of multilayer C3N.
CHINESE CHEMICAL LETTERS
(2022)
Article
Chemistry, Multidisciplinary
Zhizai Li, Siwei Yang, Caichao Ye, Gang Wang, Bo Ma, Huanhuan Yao, Qian Wang, Guoqiang Peng, Qiang Wang, Hao-Li Zhang, Zhiwen Jin
Summary: The introduction of C3N quantum dots can improve the crystallization process of 2D CsPbI3, enhancing its crystallization pathway, phase-arrangement, and morphology. The C3N quantum dots induce the formation of electron-rich regions and provide nucleation sites, enabling a bi-directional crystallization process. The optimized device shows higher power conversion efficiency and improved environmental stability.
Article
Nanoscience & Nanotechnology
Zhengyi He, Lingyan Yu, Gang Wang, Caichao Ye, Xiaoqiang Feng, Li Zheng, Siwei Yang, Guanglin Zhang, Genwang Wei, Zhiduo Liu, Zhongying Xue, Guqiao Ding
Summary: In this study, three-dimensional graphene (3D-graphene) was synthesized on a germanium substrate using two-dimensional graphene (2D-graphene) as a template layer, improving its interaction and photoinduced charge transfer ability with incident light. The detection limits of various probe molecules on the 3D/2D-graphene/Ge SERS substrate were found to be very low, indicating its potential application in chemical detection in food.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Engineering, Electrical & Electronic
Lingyan Yu, Shan Zhang, Guanglin Zhang, Zhengyi He, Xiaoqiang Feng, Zhiduo Liu, Gang Wang, Weidong Tao, Li Zheng, Siwei Yang, Guqiao Ding
Summary: This study proposes a photodetector with increased light absorption efficiency by combining 3-D graphene with an optical cavity structure. The photodetectors exhibit excellent performance with multiple reflections and pave the way for high-performance graphene-based photodetectors with hybrid architectures.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Materials Science, Multidisciplinary
Xiaoqiang Feng, Zhiduo Liu, Guanglin Zhang, Shan Zhang, Shuiping Huang, Zhengyi He, Genwang Wei, Siwei Yang, Yangguang Zhu, Caichao Ye, Cheng-Te Lin, Guqiao Ding, Gang Wang
Summary: Highly sensitive and uniform three-dimensional hybrid structures consisting of graphene quantum dots and silver nanoparticles on three-dimensional graphene were fabricated for surface-enhanced Raman scattering experiments. The structure exhibits significant electromagnetic and chemical enhancement, resulting in lower detection limits. Thus, it holds great potential for biochemical molecular detection and food safety monitoring.
ENERGY & ENVIRONMENTAL MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Xiuming Bu, Yu Bu, Quan Quan, Siwei Yang, You Meng, Dong Chen, Zhengxun Lai, Pengshan Xie, Di Yin, Dengji Li, Xianying Wang, Jian Lu, Johnny C. Ho
Summary: This article reports a heterogeneous yolk-shell nanostructure with optimized electronic structure and unique nanostructure as an efficient electrocatalyst for hydrogen evolution reaction (HER) under alkaline conditions. The catalyst shows higher activity than commercial Pt/C and Rh/C catalysts.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Penglei Zhang, Peng He, Yifeng Zhao, Siwei Yang, Qingkai Yu, Xiaoming Xie, Guqiao Ding
Summary: This study proposes an efficient strategy for the fabrication of ultra-large graphene oxide (ULGO) with high-yield preparation and remarkable electrical conductivity and mechanical properties. Additionally, the potential application of ULGO in constructing graphene films with high thermal conductivity is demonstrated.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Liangliang Chen, Zhongyuan Ma, Kangmin Leng, Tong Chen, Hongsheng Hu, Yang Yang, Wei Li, Jun Xu, Ling Xu, Kunji Chen
Summary: In this study, we introduced a TiSbTe layer into an a-SiC0.11:H memristor and successfully observed the ultra-high uniformity of the TiSbTe/a-SiC0.11:H memristor device. The TiSbTe nanocrystal was beneficial for improving the uniformity of the device and enabled the implementation of various biosynaptic functions and simulation of visual learning capability.
Article
Nanoscience & Nanotechnology
Zhuoran Li, Peng He, Yunxia Ping, Na Guo, Xianzhe Zeng, Siwei Yang, Guqiao Ding
Summary: A multiscale strategy was developed to predict the effective thermal conductivity of graphene films, providing accurate predictions after experimental calibration. The dimension effects revealed by simulation data offer important conclusions for enhancing the thermal conductivity of graphene films.
ACS APPLIED NANO MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Xinyue Yu, Zhongyuan Ma, Kangmin Leng, Tong Chen, Wei Li, Kunji Chen, Jun Xu, Ling Xu
Summary: This study reports for the first time that 3D NAND flash memory with a high on/off current ratio can be achieved by adjusting the width of the junctionless a-Si:H channel. The junctionless channel can be fabricated at low temperature without doping, reducing the difficulties caused by the diffusion and distribution of doping atoms. The successful fabrication of 3D NAND flash memory based on the junctionless a-Si:H channel provides a new way to construct a hardware unit for computing in-memory.
Review
Chemistry, Multidisciplinary
Siwei Yang, Yongqiang Li, Liangfeng Chen, Hang Wang, Liuyang Shang, Peng He, Hui Dong, Gang Wang, Guqiao Ding
Summary: The discovery of carbon-based quantum dots (CQDs) has opened up opportunities for various applications such as fluorescence bioimaging and tumor diagnosis. However, existing reviews have focused primarily on the applications rather than the formation mechanism of CQDs. This review provides a summary of the relationships between the intrinsic properties of building blocks and the photoluminescence properties of CQDs, with a focus on the bottom-up approach and the influence of different descriptors such as topology, chirality, and free radical process.
Article
Chemistry, Multidisciplinary
Tong Chen, Kangmin Leng, Zhongyuan Ma, Xiaofan Jiang, Kunji Chen, Wei Li, Jun Xu, Ling Xu
Summary: With the advent of the big data and artificial intelligence era, SiNx-based resistive random-access memories (RRAM) with controllable conductive nanopathways find significant applications in neuromorphic computing, akin to tunable weight of biological synapses. However, detecting the components of conductive tunable nanopathways in a-SiNx:H RRAM has been a challenge due to down-scaling thickness to the nanoscale during resistive switching. In this study, we show for the first time that the evolution of a Si dangling bond nanopathway in a-SiNx:H resistive switching memory can be tracked by transient current at different resistance states.
Article
Materials Science, Multidisciplinary
Guanglin Zhang, Jie Sun, Genwang Wei, Shan Zhang, Zhengyi He, Huijuan Wu, Bingkun Wang, Siwei Yang, Guqiao Ding, Zhiduo Liu, Zhiwen Jin, Caichao Ye, Gang Wang
Summary: Nitrogen-doped three-dimensional graphene (N-doped 3D-graphene) is a graphene derivative with great adsorption capacity, large specific surface area, high porosity, and optoelectronic properties. By growing N-doped 3D-graphene/Si heterojunctions on silicon substrates via plasma-assisted chemical vapor deposition (PACVD), surface-enhanced Raman scattering (SERS) substrates with promising applications are achieved. The incorporation of N atoms in 3D-graphene increases the electronic state density and enhances charge transfer, leading to improved optical and electric fields. The as-prepared SERS substrates based on N-doped 3D-graphene/Si heterojunctions demonstrate ultra-low detection for various molecules and show potential in low-concentration molecular detection and food safety.
ENERGY & ENVIRONMENTAL MATERIALS
(2023)
Article
Chemistry, Analytical
Yongqiang Li, Zhifeng Shi, Liuyang Shang, Quan Tao, Qisheng Tang, Hans-Joachim Krause, Siwei Yang, Guqiao Ding, Hui Dong
Summary: Magnetic relaxation switches (MRS) based on the state changes of magnetic nanoparticles are important for biomolecule detection in in vitro diagnosis. Magnetic graphene quantum dots have been used as magnetic probes and shown high sensitivity. This study developed a magnetic separation-assisted MRS to detect endoglin, using iron oxide as the magnetic carrier and magnetic graphene quantum dots as the magnetic probe. The assay demonstrated a broad linear range and a sensitive limit of detection, which is two orders of magnitude lower than that of MRS without magnetic separation.
SENSORS AND ACTUATORS B-CHEMICAL
(2023)
Article
Chemistry, Multidisciplinary
Hongsheng Hu, Zhongyuan Ma, Xinyue Yu, Tong Chen, Chengfeng Zhou, Wei Li, Kunji Chen, Jun Xu, Ling Xu
Summary: In this study, the carrier injection efficiency of 3D NAND flash memory based on a nanocrystalline silicon floating gate is reported. It is found that the control layer thickness of the nanocrystalline silicon floating gate can influence the direction of the C-V hysteresis curve. Thicker control layers enhance carrier injection efficiency, while thinner control layers lead to carrier injection from the top electrode into the defect state of the SiNx control layer.
